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參數資料
| 型號： | SSM5P05FU |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type |
| 中文描述： | 東芝場效應晶體管硅P通道馬鞍山類型 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 144K |
| 代理商： | SSM5P05FU |
SSM5P05FU
2002-01-24
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM5P05FU
Power Management Switch
High Speed Switching Applications
Small package
Low on resistance : R
on
= 3.3
(max) (@V
GS
=
4 V)
: R
on
= 4.0
(max) (@V
GS
=
2.5 V)
Low gate threshold voltage
Maximum Ratings
(Ta 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
20
V
Gate-Source voltage
V
GSS
12
V
DC
I
D
200
Drain current
Pulse
I
DP
400
mA
Drain power dissipation (Ta 25°C)
P
D
(Note1)
300
mW
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note1: Total rating, mounted on FR4 board
(25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.32 mm
2
5)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2L1B
Weight: 6.2 mg (typ.)
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