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參數資料
| 型號： | SSM5P16FU |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Speed Switching Applications |
| 中文描述： | 高速開關應用 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 191K |
| 代理商： | SSM5P16FU |
SSM5P16FU
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM5P16FU
High Speed Switching Applications
Analog Switch Applications
Small package
Low on-resistance
: R
on
=
8
Ω
(max) (@V
GS
=
4 V)
: R
on
=
12
Ω
(max) (@V
GS
=
2.5 V)
: R
on
=
45
Ω
(max) (@V
GS
=
1.5 V)
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
20
V
Gate-Source voltage
V
GSS
±
10
V
DC
I
D
100
Drain current
Pulse
I
DP
200
mA
Drain power dissipation (Ta
=
25°C)
P
D
200
mW
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Equivalent Circuit
(top view)
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
1: Gate1
2: Source
3: Gate2
4: Drain2
5: Drain1
JEDEC
―
JEITA
―
TOSHIBA
2-2L1B
D T
5
4
1
2
3
Q1
5
4
1
2
3
Q2
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