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參數(shù)資料
| 型號： | SSM6J205FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | High-Speed Switching Applications |
| 中文描述： | 高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 156K |
| 代理商： | SSM6J205FE |
SSM6J205FE
2007-11-01
1
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM6J205FE
High-Speed Switching Applications
Power Management Switch Applications
1.8V drive
P-ch 2-in-1
Low ON-resistance:
R
on
= 460 m
(max) (@V
GS
=
1.8 V)
R
on
= 306 m
(max) (@V
GS
=
2.5 V)
R
on
= 234 m
(max) (@V
GS
=
4.0 V)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
V
DS
V
GSS
I
D
I
DP
P
D (Note 1)
T
ch
T
stg
20
±
8
0.8
1.6
500
150
V
V
DC
Pulse
Drain current
A
Drain power dissipation
Channel temperature
Storage temperature range
mW
°
C
°
C
55 to 150
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (total dissipation)
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm
2
)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
V
(BR) DSS
I
D
=
1 mA, V
GS
=
0
I
D
=
1 mA, V
GS
=
+
8 V
V
DS
=
20 V, V
GS
=
0
20
Drain-source breakdown voltage
V
(BR) DSX
12
V
Drain cutoff current
I
DSS
10
μ
A
Gate leakage current
I
GSS
V
GS
=
±
8 V, V
DS
=
0
±
1
μ
A
Gate threshold voltage
V
th
V
DS
=
3 V, I
D
=
1 mA
0.3
1.0
V
Forward transfer admittance
Y
fs
V
DS
=
3 V, I
D
=
0.6 A
(Note 2)
1.5
2.5
S
I
D
=
0.6 A, V
GS
=
4.0 V
I
D
=
0.4 A, V
GS
=
2.5 V
I
D
=
0.1 A, V
GS
=
1.8 V
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
(Note 2)
175
234
(Note 2)
(Note 2)
230
300
306
460
Drain-source ON-resistance
R
DS (ON)
m
Ω
Input capacitance
C
iss
250
pF
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
45
pF
Reverse transfer capacitance
C
rss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
35
pF
Turn-on time
t
on
12
Switching time
Turn-off time
t
off
V
DD
=
10 V, I
D
=
0.25 A,
V
GS
=
0 to
2.5 V, R
G
=
4.7
Ω
18
ns
Drain-source forward voltage
V
DSF
I
D
=
0.8 A, V
GS
=
0 V (Note 2)
0.85
1.2
V
Note 2: Pulse test
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2N1A
Weight: 3 mg (typ.)
ES6
1, 2, 5, 6 : Drain
3 : Gate
4 : Source
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| SSM6J205FE(TE85L,F | 功能描述:MOSFET Singel P-ch 20V 0.8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| SSM6J207FE | 功能描述:MOSFET INCORRECT MOUSER P/N 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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