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參數資料
| 型號： | SSM6J23FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Current Switching Applications |
| 中文描述： | 高電流開關應用 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 296K |
| 代理商： | SSM6J23FE |
SSM6J23FE
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS
Ⅲ
)
SSM6J23FE
High Current Switching Applications
DC-DC Converter
Suitable for high-density mounting due to compact package
Low on-resistance:
R
on
= 160 m
(max) (@V
GS
= -4.0 V)
R
on
= 210 m
(max) (@V
GS
= -2.5 V)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
-12
V
Gate-Source voltage
V
GSS
±
8
V
DC
I
D
-1.2
Drain current
Pulse
I
DP
-4.8
A
Drain power dissipation
P
D
(Note 1)
500
mW
Channel temperature
T
ch
150
°
C
Storage temperature range
T
stg
55~150
°
C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Marking Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic discharge. Operators should wear anti-static clothing and use containers and
other objects that are made of anti-static materials.
Unit: mm
1,2,5,6
: Drain
3
: Gate
4 : Source
JEDEC
-
JEITA
-
TOSHIBA
2-2N1A
Weight: 3 mg (typ.)
6
KE
4
1
2
3
5
4
1
2
3
6
5
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| SSM6J25FE | High Speed Switching Applications |
| SSM6J26FE | High Speed Switching Applications |
| SSM6J50TU | High Current Switching Applications |
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| SSM6J53FE | High-Speed Switching Applications |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SSM6J25FE | 功能描述:MOSFET INCORRECT MOUSER P/N 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6J25FE(TE85L,F) | 功能描述:MOSFET Vds=-20V Id=500mA 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6J26FE | 功能描述:MOSFET INCORRECT MOUSER P/N 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6J26FE(TE85L,F) | 功能描述:MOSFET Vds=-20V Id=500mA 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6J401TU(TE85L,F | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-ch 30V 2.5A Small-Signal UF6 |
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