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參數(shù)資料
| 型號： | SSM6J53FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | High-Speed Switching Applications |
| 中文描述： | 高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 196K |
| 代理商： | SSM6J53FE |
SSM6J53FE
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6J53FE
○
High-Speed Switching Applications
○
Power Management Switch Applications
1.5 V drive
Suitable for high-density mounting due to compact package
Low on-resistance : R
on
= 136 m
(max) (@V
GS
= -2.5 V)
: R
on
= 204 m
(max) (@V
GS
= -1.8 V)
: R
on
= 364 m
(max) (@V
GS
= -1.5 V)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
V
GSS
I
D
I
DP
-20
±
8
V
Gate-Source voltage
V
DC
-1.8
Drain current
Pulse
-3.6
A
Drain power dissipation
P
D
(Note 1)
T
ch
T
stg
500
mW
°
C
°
C
Channel temperature
150
Storage temperature range
55~150
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
|Y
fs
|
I
D
=
1 mA, V
GS
=
0
I
D
=
1 mA, V
GS
=
+8 V
V
DS
=
20 V, V
GS
= 0
V
GS
=
±
8 V, V
DS
=
0
V
DS
=
3 V, I
D
=
1 mA
V
DS
=
3 V, I
D
=
0.9 A
I
D
=
1.0 A, V
GS
=
2.5 V
I
D
=
1.0 A, V
GS
=
1.8 V
I
D
=
0.1 A, V
GS
=
1.5 V
20
12
0.3
10
±
1
1.0
Drain-Source breakdown voltage
V
Drain cut-off current
μ
A
μ
A
Gate leakage current
Gate threshold voltage
V
Forward transfer admittance
(Note 2)
2.7
5.4
S
(Note 2)
95
136
(Note 2)
122
204
Drain-Source on-resistance
R
DS (ON)
(Note 2)
137
364
m
Ω
Input capacitance
C
iss
C
oss
C
rss
568
Output capacitance
75
Reverse transfer capacitance
V
DS
=
10 V, V
GS
=
0
f
=
1 MHz
67
pF
Turn-on time
t
on
29
Switching time
Turn-off time
t
off
Q
g
Q
gs
Q
gd
V
DSF
V
DD
=
10 V, I
D
=
0.9 A
V
GS
=
0 ~
2.5 V, R
G
=
4.7
Ω
39
ns
Total gate charge
10.6
Gate-Source charge
7.4
Gate-Drain charge
V
DS
=
16 V, I
DS
=
-1.8 A,
V
GS
=
4
V
3.3
nC
Drain-Source forward voltage
I
D
=
1.8 A, V
GS
=
0
(Note 2)
0.8
1.2
V
Unit : mm
ES6
JEDEC
JEITA
TOSHIBA
2-2N1A
Weight: 7.0 mg (typ.)
Note 2: Pulse test
0
6
1.2±0.05
1.6±0.05
1
1
2
0
0
3
1
0
5
4
0
1,2,5,6 :Drain
3 :Gate
4 :Source
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