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參數資料
| 型號： | SSM6K201FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | Power Management Switch Applications High Speed Switching Applications |
| 中文描述： | 電源管理開關應用高速開關應用 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 366K |
| 代理商： | SSM6K201FE |
SSM6K201FE
2006-04-25
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6K201FE
Power Management Switch Applications
High Speed Switching Applications
1.8 V drive
Low ON-resistance:
Absolute Maximum Ratings
(Ta = 25°C)
R
on
= 186 m
(max) (@V
GS
= 1.8V)
R
on
= 119 m
(max) (@V
GS
= 2.5V)
R
on
= 91 m
(max) (@V
GS
= 4.0V)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
V
DS
20
V
Gate–source voltage
V
GSS
±
12
V
DC
I
D
2.3
Drain current
Pulse
I
DP
4.6
A
Drain power dissipation
P
D
(Note 1)
500
W
Channel temperature
T
ch
150
°
C
Storage temperature range
T
stg
55~150
°
C
Note 1: Mounted on an FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
V
(BR) DSS
I
D
=
1 mA, V
GS
=
0
20
V
Drain–source breakdown voltage
V
(BR) DSX
I
D
=
1 mA, V
GS
=
–12 V
10
V
Drain cutoff current
I
DSS
V
DS
=
20 V, V
GS
=
0
1
μ
A
Gate leakage current
I
GSS
V
GS
=
±
12 V, V
DS
=
0
±
1
μ
A
Gate threshold voltage
V
th
V
DS
=
3 V, I
D
=
1 mA
0.4
1.0
V
Forward transfer admittance
Y
fs
V
DS
=
3 V, I
D
=
1.0 A
(Note2)
2.8
5.5
S
I
D
=
1.0 A, V
GS
=
4.0 V
(Note2)
71
91
I
D
=
0.5 A, V
GS
=
2.5 V
(Note2)
91
119
Drain–source ON-resistance
R
DS (ON)
I
D
=
0.2 A, V
GS
=
1.8 V
(Note2)
121
186
m
Input capacitance
C
iss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
220
pF
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
51
pF
Reverse transfer capacitance
C
rss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
42
pF
Turn-on time
t
on
12
Switching time
Turn-off time
t
off
V
DD
=
10 V, I
D
=
2.0 A,
V
GS
=
0 to 2.5 V, R
G
=
4.7
10
ns
Drain–source forward voltage
V
DSF
I
D
=
2.3 A, V
GS
=
0 V (Note2)
– 0.85
– 1.20
V
Note2: Pulse test
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2N1A
Weight: 3 mg (typ.)
Tentative
ES6
1, 2, 5, 6 : Drain
3
: Gate
4
: Source
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| SSM6K202FE | High-Speed Switching Applications |
| SSM6K203FE | High-Speed Switching Applications |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SSM6K202FE | 功能描述:MOSFET INCORRECT MOUSER P/N 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6K202FE(TE85L,F | 功能描述:MOSFET Vds=30V Id=2.3A 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6K203FE | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Speed Switching Applications |
| SSM6K204FE | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Speed Switching Applications |
| SSM6K209FE | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Speed Switching Applications |
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