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參數(shù)資料
| 型號(hào)： | SSM6K202FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | High-Speed Switching Applications |
| 中文描述： | 高速開關(guān)應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 190K |
| 代理商： | SSM6K202FE |
SSM6K202FE
2007-11-01
1
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K202FE
○
High-Speed Switching Applications
○
Power Management Switch Applications
1.8 V drive
Low ON-resistance:
R
on
= 145 m
(max) (@V
GS
= 1.8V)
R
on
= 101 m
(max) (@V
GS
= 2.5V)
R
on
= 85 m
(max) (@V
GS
= 4.0V)
Absolute Maximum Ratings (Ta = 25
C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
30
±
12
V
Gate–source voltage
V
DC
2.3
Drain current
Pulse
4.6
A
Drain power dissipation
500
mW
Channel temperature
T
ch
T
stg
150
°
C
°
C
Storage temperature
55 to 150
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
V
(BR) DSS
I
D
=
1 mA, V
GS
=
0
30
V
Drain–source breakdown voltage
V
(BR) DSX
I
D
=
1 mA, V
GS
=
–12 V
18
V
Drain cutoff current
I
DSS
V
DS
=
30 V, V
GS
=
0
1
μ
A
Gate leakage current
I
GSS
V
GS
=
±
12 V, V
DS
=
0
±
1
μ
A
Gate threshold voltage
V
th
V
DS
=
3 V, I
D
=
1 mA
0.4
1.0
V
Forward transfer admittance
Y
fs
V
DS
=
3 V, I
D
=
1.5 A
(Note2)
3.9
7.8
S
I
D
=
1.5 A, V
GS
=
4.0 V
I
D
=
1.0 A, V
GS
=
2.5 V
I
D
=
0.5 A, V
GS
=
1.8 V
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
(Note2)
66
85
(Note2)
78
101
Drain–source ON-resistance
R
DS (ON)
(Note2)
95
145
m
Ω
Input capacitance
C
iss
270
pF
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
56
pF
Reverse transfer capacitance
C
rss
47
pF
Turn-on time
t
on
20
Switching time
Turn-off time
t
off
V
DD
=
10 V, I
D
=
2 A,
V
GS
=
0 to 2.5 V, R
G
=
4.7
Ω
31
ns
Drain–source forward voltage
V
DSF
I
D
=
2.3 A, V
GS
=
0 V (Note2)
– 0.85
– 1.2
V
Note 2: Pulse test
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2N1A
Weight: 3 mg (typ.)
ES6
1, 2, 5, 6 : Drain
3 : Gate
4 : Source
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| SSM6K202FE(TE85L,F | 功能描述:MOSFET Vds=30V Id=2.3A 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6K203FE | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Speed Switching Applications |
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| SSM6K211FE | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Speed Switching Applications Power Management Switch Applications |
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