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參數資料
| 型號： | SSM6K209FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | High-Speed Switching Applications |
| 中文描述： | 高速開關應用 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 193K |
| 代理商： | SSM6K209FE |
SSM6K209FE
2007-11-01
1
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K209FE
○
High-Speed Switching Applications
○
Power Management Switch Applications
4.0V drive
Low ON-resistance
:
R
on
= 145m
(max) (@V
GS
= 4.0 V)
R
on
= 74m
(max) (@V
GS
= 10 V)
Absolute Maximum Ratings (Ta = 25
C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
V
DSS
V
GSS
I
D
I
DP
P
D
(Note 1)
30
V
Gate–source voltage
±
20
V
DC
2.5
Drain current
Pulse
5.0
A
Drain power dissipation
500
mW
Channel temperature
T
ch
T
stg
150
°
C
°
C
Storage temperature
55~150
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
Y
fs
I
D
=
1 mA, V
GS
=
0 V
I
D
=
1 mA, V
GS
=
–20 V
V
DS
=
30 V, V
GS
=
0 V
V
GS
=
±
16
V, V
DS
=
0 V
V
DS
=
5 V, I
D
=
1 mA
V
DS
=
5 V, I
D
=
1.5 A
I
D
=
1.5 A, V
GS
=
10 V
I
D
=
1.0 A, V
GS
=
4.0 V
30
Drain–source breakdown voltage
15
V
Drain cutoff current
1.2
1
μ
A
μ
A
Gate leakage current
±
1
Gate threshold voltage
2.6
V
Forward transfer admittance
(Note2)
2.7
5.3
S
(Note2)
54
74
Drain–source ON-resistance
R
DS (ON)
(Note2)
85
145
m
Ω
Input capacitance
C
iss
C
oss
C
rss
Q
g
320
Output capacitance
55
Reverse transfer capacitance
V
DS
=
15 V, V
GS
=
0 V, f
=
1 MHz
44
pF
Total Gate Charge
7.7
Gate
Source Charge
Gate
Drain Charge
Q
gs
6.0
Q
gd
V
DS
= 15V, I
D
= 2.5 A
V
GS
= 10 V
1.7
nC
Turn-on time
t
on
t
off
V
DSF
17
Switching time
Turn-off time
V
DD
=
15 V, I
D
=
1.0 A,
V
GS
=
0~4.0 V, R
G
=
10
Ω
I
D
=
–2.5 A, V
GS
=
0 V (Note2)
12
ns
Drain–source forward voltage
-0.9
–1.2
V
Note 2: Pulse test
UNIT: mm
0
6
1.2±0.05
1.6±0.05
1
1
2
0
0
3
1
5
4
0
0
JEDEC
―
JEITA
―
TOSHIBA
2-2N1A
Weight: 3.0 mg (typ.)
ES6
1, 2, 5, 6 : Drain
3 : Gate
4 : Source
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SSM6K211FE | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Speed Switching Applications Power Management Switch Applications |
| SSM6K211FE(TE85L,F | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 20V 3.2A ES6 |
| SSM6K22FE | 功能描述:MOSFET INCORRECT MOUSER P/N 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6K22FE(TE85L,F) | 功能描述:MOSFET Vds=20V Id=1.4A 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6K24FE | 功能描述:MOSFET INCORRECT MOUSER P/N 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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