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參數(shù)資料
| 型號(hào)： | SSM6J50TU |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Current Switching Applications |
| 中文描述： | 高電流開(kāi)關(guān)應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 260K |
| 代理商： | SSM6J50TU |
SSM6J50TU
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS
Ⅲ
)
SSM6J50TU
○
High Current Switching Applications
Compact package suitable for high-density mounting
Low on-resistance:
R
on
= 205m
(max) (@V
GS
= -2.0 V)
R
on
= 100m
(max) (@V
GS
= -2.5 V)
R
on
= 64m
(max) (@V
GS
= -4.5 V)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
-20
V
Gate-Source voltage
V
GSS
±
10
V
DC
I
D
-2.5
Drain current
Pulse
I
DP
-5
A
Drain power dissipation
P
D
(Note 1)
500
mW
Channel temperature
T
ch
150
°
C
Storage temperature range
T
stg
55~150
°
C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Marking Equivalent Circuit
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, be sure that the environment is
protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
1,2,5,6 : Drain
3 : Gate
4 : Source
JEDEC
-
JEITA
-
TOSHIBA
2-2T1D
Weight: 7 mg (typ.)
6
KPB
4
1
2
3
5
4
1
2
3
6
5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SSM6J50TU(TE85L,F) | 功能描述:MOSFET Vds=-20V Id=-2.5A 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6J51TU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Current Switching Applications |
| SSM6J51TU(TE85L,F) | 制造商:Toshiba 功能描述:Trans MOSFET P-CH 12V 4A 6-Pin UF T/R 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 12V 4A UF6 制造商:Toshiba America Electronic Components 功能描述:MOSFET Pch 12V 4A 0.054ohm/2.5V UF6 |
| SSM6J51TUTE85LF | 功能描述:MOSFET Vds=-12V Id=-4A 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6J53FE | 功能描述:MOSFET Vds=-20V Id=1.8A 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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