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參數資料
| 型號： | SSM6J06FU |
| 廠商： | Toshiba Corporation |
| 英文描述： | Power Management Switch High Speed Switching Applications |
| 中文描述： | 電源管理開關高速開關應用 |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 199K |
| 代理商： | SSM6J06FU |
SSM6J06FU
2003-03-28
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6J06FU
Power Management Switch
High Speed Switching Applications
Small package
Low on resistance : Ron = 0.5
max (V
GS
=
4 V)
: Ron = 0.7
max (V
GS
=
2.5 V)
Low gate threshold voltage
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DS
20
V
Gate-source voltage
V
GSS
12
V
DC
I
D
650
Drain current
Pulse
I
DP
1300
mA
Drain power dissipation (Ta 25°C)
P
D
(Note 1)
300
mW
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note 1: Mounted on FR4 board.
(25.4 mm 25.4 mm 1.6 t, Cu pad: 0.32 mm
2
6) Figure 1.
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2J1D
Weight: 6.8 mg (typ.)
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| SSM6J06FU(TE85L,F) | 功能描述:MOSFET Vds=-20V Id=-1.1A 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6J06FU_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Management Switch |
| SSM6J07FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon P Channel MOS Type |
| SSM6J07FU_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Management Switch |
| SSM6J07FUTE85LF | 功能描述:MOSFET Vds=-30V Id=-800mA 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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