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參數資料
| 型號： | SSM6K404TU |
| 廠商： | Toshiba Corporation |
| 英文描述： | High-Speed Switching Applications |
| 中文描述： | 高速開關應用 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 195K |
| 代理商： | SSM6K404TU |
SSM6K404TU
2007-11-01
1
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K404TU
○
High-Speed Switching Applications
○
Power Management Switch Applications
1.5V drive
Low ON-resistance:
R
on
= 147 m
(max) (@V
GS
= 1.5 V)
R
on
= 100 m
(max) (@V
GS
= 1.8 V)
R
on
= 70 m
(max) (@V
GS
= 2.5 V)
R
on
= 55 m
(max) (@V
GS
= 4.0 V)
Absolute Maximum Ratings (Ta = 25
C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
Gate–source voltage
V
DSS
V
GSS
I
D
I
DP
P
D
(Note 1)
20
±
10
3.0
6.0
V
V
DC
Pulse
Drain current
A
Drain power dissipation
500
mW
Channel temperature
Storage temperature
T
ch
T
stg
150
°
C
°
C
55 to 150
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
Y
fs
I
D
=
1 mA, V
GS
=
0 V
I
D
=
1 mA, V
GS
=
-10 V
V
DS
=
20 V, V
GS
=
0 V
V
GS
=
±
10 V, V
DS
=
0 V
V
DS
=
3 V, I
D
=
1 mA
V
DS
=
3 V, I
D
=
2.0 A (Note2)
I
D
=
2.0 A, V
GS
=
4.0 V (Note2)
I
D
=
2.0 A, V
GS
=
2.5 V (Note2)
I
D
=
1.0 A, V
GS
=
1.8 V (Note2)
I
D
=
0.5 A, V
GS
=
1.5 V (Note2)
20
12
0.35
5.5
11
43
53
67
82
400
68
60
5.9
4.1
1.8
14
15
-0.85
1
±
1
1.0
55
70
100
147
-1.2
V
V
μ
A
μ
A
V
S
Drain–source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
R
DS (ON)
m
Ω
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate
Source Charge
Gate
Drain Charge
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
on
t
off
V
DSF
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
pF
V
DS
= 10 V, I
D
= 3.0 A
V
GS
= 4 V
nC
Turn-on time
Turn-off time
Switching time
V
DS
= 10 V, I
D
= 2.0 A
V
GS
= 4 V
I
D
=
- 3.0 A, V
GS
=
0 V (Note2)
ns
Drain–source forward voltage
V
Note 2: Pulse test
Unit: mm
0
6
1.7±0.1
2.1±0.1
1
1
2
0
0
3
2
0
5
4
0
+
+
JEDEC
―
JEITA
―
TOSHIBA
2-2T1D
Weight: 7.0 mg (typ.)
UF6
1, 2, 5, 6 : Drain
3 : Gate
4 : Source
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