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參數(shù)資料
| 型號： | SSM6L09FU |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type |
| 中文描述： | 東芝場效應晶體管硅N / P系列頻道馬鞍山類型 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 203K |
| 代理商： | SSM6L09FU |
SSM6L09FU
2003-02-19
1
TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type
SSM6L09FU
Power Management Switch
High Speed Switching Applications
Small package
Low on resistance
Q1 Maximum Ratings
(Ta 25°C)
Q1: R
on
= 0.7
(max) (@V
GS
= 10 V)
Q2: R
on
= 2.7
(max) (@V
GS
=
10 V)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
30
V
Gate-Source voltage
V
GSS
20
V
DC
I
D
400
Drain current
Pulse
I
DP
800
mA
Q2 Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
30
V
Gate-Source voltage
V
GSS
20
V
DC
I
D
200
Drain current
Pulse
I
DP
400
mA
Maximum Ratings
(Q1, Q2 common) (Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain power dissipation (Ta 25°C)
P
D
(Note1)
300
mW
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note1: Total rating, mounted on FR4 board
(25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.32 mm
2
6) Figure 1.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2J1C
Weight: 6.8 mg (typ.)
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