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參數資料
| 型號： | SSM6L16FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Speed Switching Applications |
| 中文描述： | 高速開關應用 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 203K |
| 代理商： | SSM6L16FE |
SSM6L16FE
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type
SSM6L16FE
High Speed Switching Applications
Analog Switch Applications
Small package
Low on-resistance
Q1: R
on
=
4
Ω
(max) (@V
GS
=
2.5 V)
Q2: R
on
=
12
Ω
(max) (@V
GS
=
2.5 V)
Q1 Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
20
V
Gate-Source voltage
V
GSS
±
10
V
DC
I
D
100
Drain current
Pulse
I
DP
200
mA
Q2 Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
-20
V
Gate-Source voltage
V
GSS
±
10
V
DC
I
D
-100
Drain current
Pulse
I
DP
-200
mA
Absolute Maximum Ratings
(Q1, Q2 Common)
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain power dissipation (Ta
=
25°C)
P
D
(Note 1)
150
mW
Channel temperature
T
ch
150
°
C
Storage temperature range
T
stg
55~150
°
C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 0.135 mm
2
×
6)
Unit: mm
1: Source1
2: Gate1
3: Drain2
4: Source2
5: Gate2
6: Drain1
JEDEC
―
JEITA
―
TOSHIBA
2-2N1D
0.3 mm
0
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