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參數資料
| 型號： | SSM6N04FU |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 中文描述： | 東芝場效應晶體管硅?頻道馬鞍山類型 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 175K |
| 代理商： | SSM6N04FU |
SSM6N04FU
2003-03-28
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N04FU
High Speed Switch Applications
With built-in gate-source resistor: R
GS
= 1 M
(typ.)
2.5 V gate drive
Low gate threshold voltage: V
th
= 0.7~1.3 V
Small package
Maximum Ratings
(Ta 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DS
20
V
Gate-source voltage
V
GSS
10
V
DC drain current
I
D
100
mA
Drain power dissipation
P
D
(Note)
200
mW
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note: Total rating
Marking
Pin Assignment
(top view)
(Q1, Q2 common)
Equivalent Circuit
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2J1C
Weight: 6.8 mg (typ.)
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