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參數資料
| 型號： | SSM6N15FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Speed Switching Applications |
| 中文描述： | 高速開關應用 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 186K |
| 代理商： | SSM6N15FE |
SSM6N15FE
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N15FE
High Speed Switching Applications
Analog Switching Applications
Small package
Low ON resistance : R
on
= 4.0
(max) (@V
GS
= 4 V)
: R
on
= 7.0
(max) (@V
GS
= 2.5 V)
Absolute Maximum Ratings
(Ta
=
25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
30
V
Gate-Source voltage
±
20
V
DC
100
Drain current
Pulse
200
mA
Drain power dissipation (Ta
=
25°C)
150
mW
Channel temperature
150
°C
Storage temperature range
55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Total rating, mounted on FR4 board
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 0.135 mm
2
×
6)
Marking
Equivalent Circuit
(top view)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
1: Source1
2: Gate1
3: Drain2
4: Source2
5: Gate2
6: Drain1
JEDEC
―
JEITA
―
TOSHIBA
2-2N1D
Weight: 3mg (typ.)
0.3 mm
0
D P
6
5
4
1
2
3
Q1
Q2
6
5
4
1
2
3
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| SSM6N15FE(TE85L,F) | 功能描述:MOSFET Dual N-ch 30V 0.1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6N15FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
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| SSM6N15FU_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching Applications |
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