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參數(shù)資料
| 型號(hào)： | SSM6N09FU |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Speed Switching Applications |
| 中文描述： | 高速開(kāi)關(guān)應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 156K |
| 代理商： | SSM6N09FU |
SSM6N09FU
2003-02-19
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N09FU
High Speed Switching Applications
Small package
Low Drain-Source ON resistance.
: R
on
= 0.7
(max) (@V
GS
=
1
0 V)
: R
on
=
1
.2
(max) (@V
GS
= 4 V)
Maximum Ratings
(Ta 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
30
V
Gate-Source voltage
V
GSS
20
V
DC
I
D
400
Drain current
Pulse
I
DP
800
mA
Drain power dissipation (Ta 25°C)
P
D
(Note1)
300
mW
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note1: Total rating, mounted on FR4 board
(25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.32 mm
2
6) Figure 1.
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2J1C
Weight: 6.8 mg (typ.)
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