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參數資料
| 型號： | SSM6N05FU |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 中文描述： | 東芝場效應晶體管硅?頻道馬鞍山類型 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 149K |
| 代理商： | SSM6N05FU |
SSM6N05FU
2002-01-17
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N05FU
High Speed Switching Applications
Small package
Low on resistance : R
on
= 0.8
(max) (@V
GS
= 4 V)
: R
on
=
1
.2
(max) (@V
GS
= 2.5 V)
Low gate threshold voltage
Maximum Ratings
(Ta 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
20
V
Gate-Source voltage
V
GSS
12
V
DC
I
D
400
Drain current
Pulse
I
DP
800
mA
Drain power dissipation (Ta 25°C)
P
D
(Note1)
300
mW
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note1: Total rating, mounted on FR4 board
(25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.32 mm
2
6)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2J1C
Weight: 6.8 mg (typ.)
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| SSM6N15AFE,LM | 功能描述:MOSFET 30V VDSS 20V VGSS N-Ch 150mW PD RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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