- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382548 > SSP1N60B (FAIRCHILD SEMICONDUCTOR CORP) 600V N-Channel MOSFET PDF資料下載
參數(shù)資料
| 型號： | SSP1N60B |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 600V N-Channel MOSFET |
| 中文描述： | 1 A, 600 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 852K |
| 代理商： | SSP1N60B |
2001 Fairchild Semiconductor Corporation
November 2001
Rev. A, November 2001
S
SSP1N60B/SSS1N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
1.0A, 600V, R
DS(on)
= 12
@V
GS
= 10 V
Low gate charge ( typical 5.9 nC)
Low Crss ( typical 3.6 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
SSP1N60B
SSS1N60B
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
600
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
1.0
0.6
3.0
1.0 *
0.6 *
3.0 *
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
±
30
50
1.0
3.4
5.5
(Note 2)
(Note 1)
(Note 1)
(Note 3)
34
0.27
17
0.13
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
-55 to +150
T
L
300
°C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
SSP1N60B
3.67
0.5
62.5
SSS1N60B
7.48
--
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
TO-220
SSP Series
G
S
D
S
D
G
TO-220F
SSS Series
G
S
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SSS2N60B | 600V N-Channel MOSFET |
| SSP2N60B | 600V N-Channel MOSFET |
| SSS45N20B | 200V N-Channel MOSFET |
| SSS4N60 | 600V N-Channel MOSFET |
| SSS4N60B | 600V N-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SSP1N60B_Q | 功能描述:MOSFET N-Ch/600V/1a/12Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSP-1R-1000B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| SSP-1R-10B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| SSP1TKG | 制造商:CIT 制造商全稱:CIT Relay & Switch 功能描述:CIT SWITCH |
| SSP1TKQ | 制造商:CIT 制造商全稱:CIT Relay & Switch 功能描述:CIT SWITCH |
發(fā)布緊急采購，3分鐘左右您將得到回復。