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參數資料
| 型號： | SSS4N60B |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 600V N-Channel MOSFET |
| 中文描述： | 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數： | 1/10頁 |
| 文件大小： | 890K |
| 代理商： | SSS4N60B |
2002 Fairchild Semiconductor Corporation
Rev. B, June 2002
S
SSP4N60B/SSS4N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
4.0A, 600V, R
DS(on)
= 2.5
@V
GS
= 10 V
Low gate charge ( typical 22 nC)
Low Crss ( typical 14 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-220F package isolation = 4.0kV
(Note 6)
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
SSP4N60B
SSS4N60B
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
600
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
4.0
2.5
16
4.0 *
2.5 *
16 *
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
±
30
240
4.0
10
5.5
(Note 2)
(Note 1)
(Note 1)
(Note 3)
100
0.8
33
0.26
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
-55 to +150
T
L
300
°C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
SSP4N60B
1.25
0.5
62.5
SSS4N60B
3.79
--
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
TO-220
SSP Series
G
S
D
S
D
G
TO-220F
SSS Series
G
S
D
相關PDF資料 |
PDF描述 |
|---|---|
| SSP4N60B | 600V N-Channel MOSFET |
| SSS4N80AS | Advanced Power MOSFET |
| SSS6N70A | Advanced Power MOSFET |
| SSS6N90A | Advanced Power MOSFET |
| SSS70N10 | Advanced Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SSS4N60BT | 功能描述:MOSFET NCh/600V/2.3a/2.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSS4N70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 700V V(BR)DSS | 2.3A I(D) | SOT-186 |
| SSS4N80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 2.3A I(D) | SOT-186 |
| SSS4N80A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 2.5A I(D) | TO-220F |
| SSS4N80AS | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
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