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參數(shù)資料
| 型號： | SSS70N10 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 先進(jìn)的功率MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 652K |
| 代理商： | SSS70N10 |
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175
Operating Temperature
Lower Leakage Current : 10 A (Max.) @ V
DS
= 100V
Lower R
DS(ON)
: 0.018 (Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
R
JC
R
JA
θ
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
V
DSS
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
Continuous Drain Current (T
C
=100
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
)
)
)
Characteristic
Value
100
28
19.8
220
+
_
Units
V
Symbol
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
A
TO-220F
1.Gate 2. Drain 3. Source
3
2
1
O
1
O
O
1
O
1
2
O
3
Ο
C
Ο
C
Ο
C
Ο
C
Ο
C
Ο
C
θ
Ο
C
SSS70N10A
BV
DSS
= 100 V
R
DS(on)
= 0.023
I
D
= 28 A
1568
28
4.9
6.5
49
0.32
- 55 to +175
300
3.09
62.5
--
--
2
0
1999 Fairchild Semiconductor Corporation
Rev. B
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SSS70N10A | Advanced Power MOSFET |
| SST210 | N-CHANNEL LATERAL DMOS SWITCH |
| SST214 | HANDLE |
| SST4416 | N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER |
| SST823 | Voltage Regulator IC; Output Current:150mA; Output Voltage:2.8V; Package/Case:5-SOT-23; Supply Voltage Max:6V; Current Rating:150mA; Leaded Process Compatible:No; Output Current Max:150mA; Output Voltage Max:2.8V |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SSS70N10A | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSS7N55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:N-CHANNEL POWER MOSFETS |
| SSS7N60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:N-CHANNEL POWER MOSFETS |
| SSS7N60A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:ADVANCED POWER MOSFET |
| SSS7N60B | 功能描述:MOSFET N-Ch/600V/4a/1.2Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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