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參數資料
| 型號： | SSTA06 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | NPN General Purpose Transistor |
| 中文描述： | NPN通用型晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 66K |
| 代理商： | SSTA06 |
SSTA06 / MMSTA06 / MPSA06
Transistors
NPN General Purpose Transistor
SSTA06 / MMSTA06 / MPSA06
!
Features
1) BV
CEO
< 80V.( I
C
=1mA)
2) Complements the SSTA56 / MMSTA56 / MPSA56.
!
Package, marking and packaging specifications
Part No.
Packaging type
Mark
Code
Basic ordering unit (pieces)
SSTA06
SST3
R1G
T116
3000
MMSTA06
SMT3
R1G
T146
3000
MPSA06
TO-92
-
T93
3000
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
Limits
80
80
4
0.5
0.2
0.625
150
-55~+150
Unit
V
V
V
A
W
P
C
C
C
MPSA06
SSTA06, MMSTA06
!
External dimensions
(Units : mm)
SSTA06
MMSTA06
MPSA06
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
(1) Emitter
(2) Base
(3) Collector
All terminals have same dimensions
All terminals have same dimensions
0~0.1
0.2Min.
2
1
0.95
0.45±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.950.95
+
0
0.1
+0.2
+0.1
0.06
+0.1
0.05
(2)
(1)
(3)
0~0.1
2
±
0
1
0
1.1
0.8±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.950.95
+
0
0.1
+0.2
+0.1
0.06
+0.1
0.05
(2)
(1)
(3)
4
±
0
(
2
4.8
±
0.2
3.7
±
0.2
5
0.45
±
0.1
2.3
0.5
±
0.1
2.5+0.3
0.1
(1)
(2)
(3)
!
Electrical characteristics
(Ta=25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
I
CBO
I
CEO
V
CE(sat)
Min.
4
80
-
-
-
Typ.
-
-
-
-
-
Max.
-
-
0.1
1
0.25
Unit
V
V
Conditions
μ
A
I
C
=
100
μ
A
I
C
=
1mA
V
CB
=
80V
V
CE
=
60V
I
C
/I
B
=
100mA/10mA
V
CE
/I
B
=
1V/100mA
V
CE
=
1V, I
C
=
10mA
V
CE
=
1V, I
C
=
100mA
V
BE(ON)
-
-
-
-
-
1.2
-
-
-
V
V
h
FE
100
100
100
-
f
T
MHz
V
CE
=
2V, I
E
=
10mA, f
=
100MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Base-emitter saturation voltage
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
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