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參數資料
| 型號： | STB120NF10 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 100V - 0.009 W - 120A DPAK/TO-220 STripFET II POWER MOSFET |
| 中文描述： | N溝道100V的- 0.009糯- 120A條DPAK/TO-220 STripFET二功率MOSFET |
| 文件頁數： | 1/10頁 |
| 文件大小： | 393K |
| 代理商： | STB120NF10 |
1/10
May 2003
STB120NF10
STP120NF10
N-CHANNEL 100V - 0.009
- 120A D2PAK/TO-220
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.009
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
APPLICATION ORIENTED
CHARACTERIZATION
I
SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize the on-resistance. It is therefore suitable as
primary switch in advanced high-efficiency, high-
frequency isolated DC-DC converters for Telecom and
Computer applications. It is also intended for any
applications with low gate drive requirements.
APPLICATIONS
I
AUDIO AMPLIFIERS
I
POWER TOOLS
TYPE
V
DSS
R
DS(on)
I
D
STB120NF10
STP120NF10
100 V
100 V
< 0.0105
< 0.0105
120 A
120 A
1
2
3
TO-220
1
3
D
2
PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB120NF10
STP120NF10
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
E
AS(2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
(1) I
SD
≤
120A, di/dt
≤
300A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 60A, V
DD
= 50V
MARKING
B120NF10
P120NF10
PACKAGE
TO-263
TO-220
PACKAGING
TAPE & REEL
TUBE
Parameter
Value
100
100
± 20
120
85
480
312
2.08
10
550
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
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| STB120NF10T4 | 功能描述:MOSFET N-Ch 100 Volt 120Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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