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參數(shù)資料
| 型號(hào)： | STB4NB80 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 800V-3Ω-4A- TO-220/TO-220FP PowerMESHTM MOSFET(N溝道MOSFET) |
| 中文描述： | N溝道800V的-3Ω- 4A條，TO-220/TO-220FP PowerMESHTM MOSFET的（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 53K |
| 代理商： | STB4NB80 |
STB4NB80
N - CHANNEL 800V - 3
- 4A - TO-220/TO-220FP
PowerMESH
MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 3
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process,
SGS-Thomson
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
has
designed
an
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
June 1998
1
3
123
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STB4NB80
STB4NB80FP
800
800
±
30
4(*)
2.4(*)
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
(
)
Pulse width limited by safe operating area (
1
) I
SD
≤
4 A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
(*)
Limited only by maximum temperature allowed
V
V
V
A
A
A
W
4
2.4
16
100
1
4.5
16
35
0.28
4.5
2000
W/
o
C
V/ns
V
o
C
o
C
dv/dt(
1
)
V
ISO
T
stg
T
j
-65 to 150
150
TYPE
V
DSS
R
DS(on)
3.3
3.3
I
D
STB4NB80
STB4NB80FP
800 V
800 V
4 A
4 A
I
2
PAK
TO-262
(Suffix "-1")
D
2
PAK
TO-263
(Suffix "T4")
1/6
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