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參數資料
| 型號： | STB60NE06-1 |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
| 中文描述： | ? -通道增強型單特征尺寸功率MOSFET |
| 文件頁數： | 1/9頁 |
| 文件大小： | 115K |
| 代理商： | STB60NE06-1 |
STB60NE06-16
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE
” POWER MOSFET
I
TYPICAL R
DS(on)
= 0.013
I
EXCEPTIONAL dV/dt CAPABILTY
I
100% AVALANCHE TESTED
I
LOW GATE CHARGE 100
o
C
I
HIGH dV/dt CAPABILITY
I
APPLICATION ORIENTED
CHARACTERIZATION
I
FOR THROUGH-HOLE VERSION CONTACT
SALESOFFICE
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSONunique ” Single Feature Size
”
strip-based process. The
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturingreproducibility.
resulting transistor
APPLICATIONS
I
DC MOTORCONTROL
I
DC-DC & DC-AC CONVERTERS
I
SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 0.016
I
D
STB60NE06-1
60 V
60 A
January 1998
1
3
D
2
PAK
TO-263
(Suffix”T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0)
60
V
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
60
V
V
GS
±
20
V
I
D
60
A
I
D
42
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
240
A
150
W
Derating Factor
1
W/
o
C
dV/dt(
1
)
Peak Diode Recovery voltage slope
6
V/ns
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
175
(
1
) I
SD
≤
60 A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
J
≤
T
JMAX
1/9
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相關代理商/技術參數 |
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|---|---|
| STB60NE06-16 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
| STB60NE06-16T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 60A I(D) | TO-263AB |
| STB60NE06L-16 | 制造商:STMicroelectronics 功能描述: |
| STB60NE06L-16T4 | 功能描述:MOSFET N-Ch 60 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB60NF03L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.008 ohm - 60A D2PAK STripFET POWER MOSFET |
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