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參數資料
| 型號： | STB7NC80Z-1 |
| 廠商： | 意法半導體 |
| 英文描述： | New Generation Twisted Paired Multiconductor Audio Cable; Number of Conductors:4; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape |
| 中文描述： | N溝道800V的- 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK齊保護的PowerMESH⑩三MOSFET的 |
| 文件頁數： | 1/13頁 |
| 文件大小： | 542K |
| 代理商： | STB7NC80Z-1 |
1/13
May 2003
STP7NC80Z - STP7NC80ZFP
STB7NC80Z - STB7NC80Z-1
N-CHANNEL 800V - 1.3
- 6.5A TO-220/FP/D
2
PAK/I
2
PAK
Zener-Protected PowerMESHIII MOSFET
I
TYPICAL R
DS
(on) = 1.3
I
EXTREMELY HIGH dv/dt AND CAPABILITY
GATE TO - SOURCE ZENER DIODES
I
100% AVALANCHE TESTED
I
VERY LOW GATE INPUT RESISTANCE
I
GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
APPLICATIONS
I
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
I
WELDING EQUIPMENT
ORDERING INFORMATION
SALES TYPE
TYPE
V
DSS
R
DS(on)
I
D
STP7NC80Z
STP7NC80ZFP
STB7NC80Z
STB7NC80Z-1
800 V
800 V
800 V
800 V
< 1.5
< 1.5
< 1.5
< 1.5
6.5 A
6.5 A
6.5 A
6.5 A
MARKING
PACKAGE
PACKAGING
STP7NC80Z
P7NC80Z
TO-220
TUBE
STP7NC80ZFP
P7NC80ZFP
TO-220FP
TUBE
STB7NC80ZT4
B7NC80Z
D
2
PAK
TAPE & REEL
STB7NC80Z-1
B7NC80Z
I
2
PAK
TUBE
TO-220
TO-220FP
1
2
3
I
2
PAK
(Tabless TO-220)
123
1
3
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
相關PDF資料 |
PDF描述 |
|---|---|
| STB80NE03L-06-1 | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PC01; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Body Style:Straight |
| STB80NE06-10T4 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 80A I(D) | TO-263AB |
| STB80NE06-10 | N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
| STB8NC50 | N-CHANNEL 500V - 0.7ohm - 8A D2PAK PowerMesh⑩II MOSFET |
| STB8NC70ZT4 | N-CHANNEL 700V 0.90 OHM 6.8A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STB7NC80ZT4 | 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB7NK80Z | 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 800V 5.2A D2PAK |
| STB7NK80Z-1 | 功能描述:MOSFET N-Ch, 800V-1.5ohms Zener SuperMESH 5.2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB7NK80ZT4 | 功能描述:MOSFET N-Ch 800 Volt 5.2A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB80N20M5 | 功能描述:MOSFET N-Ch 200V 0.019 61A Mdmesh V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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