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參數資料
| 型號： | STB80NE06-10T4 |
| 廠商： | 意法半導體 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 80A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 80A條（丁）|對263AB |
| 文件頁數： | 1/8頁 |
| 文件大小： | 94K |
| 代理商： | STB80NE06-10T4 |
STB80NE06-10
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE
” POWER MOSFET
I
TYPICAL R
DS(on)
= 0.0085
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
APPLICATION ORIENTED
CHARACTERIZATION
I
FOR THROUGH-HOLE VERSION CONTACT
SALESOFFICE
DESCRIPTION
This Power MOSFET is the latestdevelopment of
SGS-THOMSON unique ”Single Feature Size
”
strip-based
process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a
remarkable manufacturingreproducibility.
APPLICATIONS
I
SOLENOID ANDRELAY DRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC CONVERTERS
I
AUTOMOTIVE ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
February 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0)
60
V
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
60
V
V
GS
±
20
V
I
D
80
A
I
D
57
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
320
A
150
W
Derating Factor
1
W/
o
C
dv/dt
Peak Diode Recovery voltage slope
7
V/ns
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
175
(
1
) I
SD
≤
80 A,di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
<0.01
I
D
STB80NE06-10
60 V
80 A
1
3
D
2
PAK
TO-263
(suffix ”T4”)
1/8
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相關代理商/技術參數 |
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|---|---|
| STB80NF03L-04 | 功能描述:MOSFET N-Ch 30 Volt 80 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB80NF03L-04-1 | 功能描述:MOSFET N-Ch, 30V-0.0035ohms 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB80NF03L-04T4 | 功能描述:MOSFET N-Ch 30 Volt 80 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB80NF03L-04T4_09 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30 V, 0.0035 Ω, 80 A D2PAK STripFET? II Power MOSFET |
| STB80NF04 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 40V - 0.008 OHM - 80A D2PAK/TO-220 STRIPFET II POWER MOSFET |
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