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參數資料
| 型號： | STB8NC50 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 500V - 0.7ohm - 8A D2PAK PowerMesh⑩II MOSFET |
| 中文描述： | N溝道500V - 0.7ohm - 8A條采用D2PAK PowerMesh第二MOSFET的⑩ |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 441K |
| 代理商： | STB8NC50 |
1/9
November 2001
STB8NC50
N-CHANNEL 500V - 0.7
- 8A D
2
PAK
PowerMeshII MOSFET
I
TYPICAL R
DS
(on) = 0.7
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
NEW HIGH VOLTAGE BENCHMARK
I
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
II is
the evolution of the first
generation of MESH OVERLAY
.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt(1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
(1)I
SD
≤
8A, di/dt
≤
300A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
TYPE
V
DSS
R
DS(on)
I
D
STB8NC50
500V
< 0.85
8 A
Parameter
Value
Unit
500
V
500
V
±30
V
8
A
5.4
A
32
A
135
W
1
3
W/°C
V/ns
–65 to 150
°C
150
°C
1
3
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
相關PDF資料 |
PDF描述 |
|---|---|
| STB8NC70ZT4 | N-CHANNEL 700V 0.90 OHM 6.8A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET |
| STB8NC70Z-1 | N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
| STB9NK60ZFP | N-CHANNEL 600V - 0.85ohm - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET |
| STB9NK70ZFP | N-CHANNEL 700V - 1ohm - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| STB8NC50-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 0.7ohm - 8A TO-220/TO-220FP/I2PAK PowerMesh⑩II MOSFET |
| STB8NC50T4 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB8NC70Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
| STB8NC70Z-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
| STB8NC70ZT4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V 0.90 OHM 6.8A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET |
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