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參數(shù)資料
| 型號(hào)： | STB8NC70ZT4 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 700V 0.90 OHM 6.8A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET |
| 中文描述： | N溝道700V的0.90歐姆6.8A TO-220/TO-220FP/D2PAK/I2PAK穩(wěn)壓保護(hù)POWERMESH三MOSFET的 |
| 文件頁(yè)數(shù)： | 1/13頁(yè) |
| 文件大小： | 532K |
| 代理商： | STB8NC70ZT4 |
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1/13
December 2002
STP8NC70Z - STP8NC70ZFP
STB8NC70Z - STB8NC70Z-1
N-CHANNEL 700V - 0.90
- 6.8A TO-220/FP/D
2
PAK/I
2
PAK
Zener-Protected PowerMESHIII MOSFET
(1)I
SD
≤
6.8A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
.
(*)Pulse width Limited by maximum temperature allowed
TO-220
2
3
TO-220FP
123
I
2
PAK
1
3
D
2
PAK
I
TYPICAL R
DS
(on) = 0.9
I
EXTREMELY HIGH dv/dt AND CAPABILITY
GATE-TO- SOURCE ZENER DIODES
I
100% AVALANCHE TESTED
I
VERY LOW GATE INPUT RESISTANCE
I
GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
I
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
I
WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP8NC70Z/FP
700V
< 1.2
6.8 A
STB8NC70Z/-1
700V
< 1.2
6.8 A
Parameter
Value
Unit
STP(B)8NC70Z(-1)
STP8NC70ZFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
G
)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
700
V
700
V
Gate- source Voltage
± 25
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
6.8
6.8(*)
A
4.3
4.3(*)
A
Drain Current (pulsed)
27
27(*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
135
40
W
1.08
0.32
W/°C
I
GS
Gate-source Current (DC)
Gate source ESD(HBM-C=100pF, R=15K
)
Peak Diode Recovery voltage slope
±50
mA
V
ESD(G-S)
dv/dt(1)
V
ISO
T
stg
T
j
3
KV
3
V/ns
Insulation Winthstand Voltage (DC)
--
2000
V
Storage Temperature
–65 to 150
°C
Max. Operating Junction Temperature
150
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB8NC70Z-1 | N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
| STB9NK60ZFP | N-CHANNEL 600V - 0.85ohm - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET |
| STB9NK70ZFP | N-CHANNEL 700V - 1ohm - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| STBR606 | 50-60Hz RECTIFICATION BRIDGE |
| STBR608 | 50-60Hz RECTIFICATION BRIDGE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB8NM60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 650V Tjmax-0.9ohm-8A TO-220/FP/D/IPAK/D2PAK STripFET II MOSFET |
| STB8NM60D | 功能描述:MOSFET N Ch 600V 0.9Ohm 8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB8NM60N | 功能描述:MOSFET N-ch 600 Volts 7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB8NM60T4 | 功能描述:MOSFET N-Ch 650 Volt 5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB8NS25 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 250V - 0.38ohm - 8A D2PAK MESH OVERLAY⑩ MOSFET |
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