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參數資料
| 型號： | STB80NE03L-06-1 |
| 廠商： | 意法半導體 |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PC01; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Body Style:Straight |
| 中文描述： | N溝道30V的- 0.005ohm - 80A條采用D2PAK / I2PAK STripFET⑩功率MOSFET |
| 文件頁數： | 1/9頁 |
| 文件大小： | 295K |
| 代理商： | STB80NE03L-06-1 |
1/9
February 2003
STB80NE03L-06
STB80NE03L-06-1
N-CHANNEL 30V - 0.005
- 80A D
2
PAK / I
2
PAK
STripFET POWER MOSFET
(1) I
SD
≤
804A, di/dt
≤
300A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
I
TYPICAL R
DS
(on) = 0.005
I
EXCEPTIONAL dv/dt CAPABILITY
I
LOW GATE CHARGE 100°C
I
100% AVALANCHE TESTED
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
unique
Size” strip-based process. The resulting transis-
tor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
“Single
Feature
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAY DRIVERS
I
MOTOR CONTROL,AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
( )
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
G
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STB80NE03L-06
STB80NE03L-06-1
30 V
30 V
< 0.006
< 0.006
80 A
80 A
Parameter
Value
Unit
30
V
30
V
± 20
V
80
A
60
A
320
A
150
W
1
7
W/°C
V/ns
– 55 to 175
°C
D
2
PAK
1
3
123
I
2
PAK
INTERNAL SCHEMATIC DIAGRAM
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相關代理商/技術參數 |
參數描述 |
|---|---|
| STB80NE03L06T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 80A I(D) | TO-263AA |
| STB80NE03L-06T4 | 功能描述:MOSFET N-Ch 30 Volt 80 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB80NE06-10 | 功能描述:MOSFET RO 511-STB80NF06 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB80NE06-10T4 | 功能描述:MOSFET N-CH 60V 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB80NF03L-04 | 功能描述:MOSFET N-Ch 30 Volt 80 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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