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參數資料
| 型號： | STD100NH02L |
| 廠商： | 意法半導體 |
| 英文描述： | RESONATOR CERM W/CAP 10.00MHZ |
| 中文描述： | N溝道24V的- 0.0042歐姆-第60A條的DPAK /像是iPak STripFET⑩三功率MOSFET |
| 文件頁數： | 1/12頁 |
| 文件大小： | 511K |
| 代理商： | STD100NH02L |
1/12
September 2003
STD100NH02L
N-CHANNEL 24V - 0.0042
- 60A DPAK/IPAK
STripFET III POWER MOSFET
I
TYPICAL R
DS
(on) = 0.0042
@ 10 V
I
TYPICAL R
DS
(on) = 0.005
@ 5 V
I
R
DS(ON)
* Qg INDUSTRY’s BENCHMARK
I
CONDUCTION LOSSES REDUCED
I
SWITCHING LOSSES REDUCED
I
LOW THRESHOLD DEVICE
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
The STD100NH02L utilizes the latest advanced design
rules of ST’s proprietary STripFET technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
APPLICATIONS
I
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
TYPE
V
DSS
R
DS(on)
I
D
STD100NH02L
24 V
< 0.0048
60 A
(2)
3
2
1
1
3
IPAK
TO-251
(Suffix “-1”)
DPAK
TO-252
(Suffix “T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
spike(1)
Drain-source Voltage Rating
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D(2)
Drain Current (continuous) at T
C
= 25°C
I
D(2)
Drain Current (continuous) at T
C
= 100°C
I
DM(3)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
E
AS (4)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
Parameter
Value
30
24
24
± 20
60
60
240
100
0.67
800
Unit
V
V
V
V
A
A
A
W
W/°C
mJ
-55 to 175
°C
INTERNAL SCHEMATIC DIAGRAM
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PDF描述 |
|---|---|
| STD100NH03L | N-CHANNEL 30V - 0.005 W - 60A DPAK STripFET⑩ III POWER MOSFET |
| STD100NH03LT4 | N-CHANNEL 30V - 0.005 W - 60A DPAK STripFET⑩ III POWER MOSFET |
| STD12NF06L | N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STripFET⑩ II POWER MOSFET |
| STD16NF06L | N-CHANNEL 60V - 0.060 - 24A DPAK/IPAK STripFET II POWER MOSFET |
| STD16NF06L-1 | N-CHANNEL 60V - 0.060 - 24A DPAK/IPAK STripFET II POWER MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STD100NH02L_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 24V - 0.0042ohm - 60A - DPAK - IPAK STripFET TM II Power MOSFET |
| STD100NH02L-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 24V - 0.0042? - 60A - DPAK - IPAK STripFET? II Power MOSFET |
| STD100NH02LT4 | 功能描述:MOSFET N-Ch 24 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD100NH03L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.005ohm - 60A - DPAK STripFET TM III Power MOSFET |
| STD100NH03L_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.005ohm - 60A - DPAK STripFET TM III Power MOSFET |
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