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參數資料
| 型號： | STD16NF06L-1 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 60V - 0.060 - 24A DPAK/IPAK STripFET II POWER MOSFET |
| 中文描述： | N溝道60V的- 0.060 - 24A條的DPAK /像是iPak STripFET二功率MOSFET |
| 文件頁數： | 1/11頁 |
| 文件大小： | 347K |
| 代理商： | STD16NF06L-1 |
1/11
March 2005
STD16NF06L
N-CHANNEL 60V - 0.060
- 24A DPAK/IPAK
STripFET II POWER MOSFET
Rev.
3.0
Figure 1:
Package
Table 1: General Features
■
TYPICAL R
DS
(on) = 0.060
■
LOGIC LEVEL DEVICE
■
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
■
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less
critical
alignment
remarkable manufacturing reproducibility
steps
therefore
a
APPLICATIONS
■
SWITCHING APPLICATIONS
TYPE
V
DSS
R
DS(on)
I
D
STD16NF06L
60 V
< 0.070
24 A
3
2
1
1
3
IPAK
TO-251
(Suffix “-1”)
DPAK
TO-252
(Suffix “T4”)
Figure 2: Internal Schematic Diagram
Table 2:
Order Codes
SALES TYPE
STD16NF06LT4
STD16NF06L-1
Table 3:
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
E
AS (2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
(1) I
SD
≤
16A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 20A, V
DD
= 48V
MARKING
D16NF06L
D16NF06L
PACKAGE
TO-252
TO-251
PACKAGING
TAPE & REEL
TUBE
Parameter
Value
60
60
± 18
24
17
96
40
0.27
11.5
200
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
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相關代理商/技術參數 |
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| STD16NF06LT4 | 功能描述:MOSFET N-Ch 60 Volt 16 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD16NF06T4 | 功能描述:MOSFET N Ch 60V 0.060 Ohm 16A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| STD1703LT4 | 制造商:STMicroelectronics 功能描述:LOW VOLTAGE POWER MOSFET |
| STD170BLK | 功能描述:LED 安裝硬件 .2" DIA X .17" BLACK RoHS:否 制造商:Bivar 產品:LED Mounting Clips LED 大小:5 mm 材料:Nylon 顏色:Black 主體長度:4.4 mm 面板厚度尺寸: 封裝:Bulk |
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