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參數資料
| 型號： | STD20NE03L-1 |
| 廠商： | 意法半導體 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 20A I(D) | TO-251AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 20A條（丁）|對251AA |
| 文件頁數： | 1/9頁 |
| 文件大小： | 105K |
| 代理商： | STD20NE03L-1 |
STD20NE03L
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE
” POWER MOSFET
I
TYPICAL R
DS(on)
= 0.016
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
LOW GATE CHARGE A 100
o
C
I
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latestdevelopment of
SGS-THOMSON unique ”Single Feature Size
”
strip-based process. The
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturingreproducibility.
resulting transistor
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
SOLENOIDAND RELAY DRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
December 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
30
±
15
V
V
GS
V
I
D
I
D
20**
A
20**
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
100
A
P
tot
50
W
Derating Factor
0.33
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
7
V/ns
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
(**) Value limited only by the package
175
(
1
) I
SD
≤
40 A,di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.020
I
D
STD20NE03L
30 V
20 A
3
2
1
IPAK
TO-251
(Suffix”-1”)
1
3
DPAK
TO-252
(Suffix ”T4”)
1/9
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相關代理商/技術參數 |
參數描述 |
|---|---|
| STD20NE03LT4 | 制造商:STMicroelectronics 功能描述: |
| STD20NE06 | 功能描述:MOSFET RO 511-STD20NF06 511BCY79IX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD20NE06T4 | 功能描述:MOSFET N-CH 60V 20A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD20NF06 | 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 60V 24A DPAK |
| STD20NF06L | 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 60V 24A TO252 |
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