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參數(shù)資料
型號: STD2NB80T4
廠商: 意法半導(dǎo)體
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 1.9A I(D) | TO-252AA
中文描述: 晶體管| MOSFET的| N溝道| 800V的五(巴西)直| 1.9AI(四)|對252AA
文件頁數(shù): 1/9頁
文件大?。?/td> 92K
代理商: STD2NB80T4
STD2NB80
N - CHANNEL 800V - 4.6
- 1.9A - IPAK/DPAK
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 4.6
I
EXTREMELYHIGH dv/dt CAPABILITY
I
100%AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
I
ADD SUFFIX”T4” FORORDERING IN TAPE
& REEL (2500UNITS)
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family
of
power
outstanding performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
MOSFETs
The
new
with
patent
APPLICATIONS
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
January 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0)
800
V
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
800
V
V
GS
I
D
I
D
I
DM
(
)
P
tot
±
30
1.9
V
A
1.2
A
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
7.6
A
55
W
Derating Factor
0.44
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
4.5
V/ns
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
o
C
(
1
) I
SD
2A, di/dt
200 A/
μ
s, V
DD
V
(BR)DSS
, Tj
T
JMAX
TYPE
V
DSS
800 V
R
DS(on)
< 6.5
I
D
STD2NB80
1.9 A
3
2
1
IPAK
TO-251
(Suffix”-1”)
1
3
DPAK
TO-252
(Suffix ”T4”)
1/9
相關(guān)PDF資料
PDF描述
STD2NB80 N - CHANNEL 800V - 4.6 ohm - 1.9A - IPAK/DPAK PowerMESH MOSFET
STD2NC40 N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET
STD2NC40-1 N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET
STD2NC45-1 N-CHANNEL 450V - 4.1ohm - 1.5 A IPAK / TO-92 SuperMESH⑩Power MOSFET
STQ1NC45R Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STD2NC40 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET
STD2NC40-1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET
STD2NC45-1 功能描述:MOSFET N-Ch, 450V-4.1ohms 1.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD2NC45-1 制造商:STMicroelectronics 功能描述:MOSFET N I-PAK
STD2NC45-1_06 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 450V - 4.1ヘ - 1.5A - IPAK - TO-92 SuperMESH⑩ Power MOSFET
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