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參數資料
| 型號： | STD2NC60 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 600V - 3.3ohm - 2A DPAK / IPAK PowerMesh⑩II MOSFET |
| 中文描述： | N溝道600V的- 3.3ohm -甲的DPAK /像是iPak PowerMesh第二MOSFET的⑩ |
| 文件頁數： | 1/9頁 |
| 文件大小： | 283K |
| 代理商： | STD2NC60 |
1/9
January 2001
STD2NC60
N-CHANNEL 600V - 3.3
- 2A DPAK / IPAK
PowerMeshII MOSFET
I
TYPICAL R
DS
(on) = 3.3
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
NEW HIGH VOLTAGE BENCHMARK
I
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
II is
the evolution of the first
generation of MESH OVERLAY
.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt(1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
(1)I
SD
≤
2A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
TYPE
V
DSS
R
DS(on)
I
D
STD2NC60
600V
< 3.6
2A
Parameter
Value
Unit
600
V
600
V
±30
V
2
A
1.3
A
8
A
60
W
0.48
4
W/°C
V/ns
–65 to 150
°C
150
°C
3
2
1
1
3
DPAK
IPAK
INTERNAL SCHEMATIC DIAGRAM
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|---|---|
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| STD2NC70Z-1 | N-CHANNEL 700V - 4.1ohm - 2.3A DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
| STD2NK60Z | Zener-Protected SuperMESH MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| STD2NC60-1 | 制造商:STMicroelectronics 功能描述:TRANS MOSFET N-CH 600V 2A 3PIN IPAK - Rail/Tube |
| STD2NC70Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 4.1ohm - 2.3A DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
| STD2NC70Z-1 | 制造商:STMicroelectronics 功能描述: |
| STD2NC70ZT4 | 制造商:STMicroelectronics 功能描述: |
| STD2NK100Z | 功能描述:MOSFET N-Channel 1000V Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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