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參數資料
| 型號： | STD35NF3LL |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 30V - 0.014 ohm - 35A IPAK/DPAK STripFET⑩ II POWER MOSFET |
| 中文描述： | N溝道30V的- 0.014歐姆- 35A條，像是iPak / DPAK封裝STripFET⑩二功率MOSFET |
| 文件頁數： | 1/10頁 |
| 文件大小： | 468K |
| 代理商： | STD35NF3LL |
1/10
February 2002
.
STD35NF3LL
STD35NF3LL-1
N-CHANNEL 30V - 0.014
- 35A IPAK/DPAK
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.016
@ 4.5V
I
OPTIMAL R
DS
(on) x Qg TRADE-OFF @ 4.5V
I
CONDUCTION LOSSES REDUCED
I
SWITCHING LOSSES REDUCED
I
LOW THRESHOLD DRIVE
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This application specific Power MOSFET is the third
genaration of STMicroelectronis unique "Single Feature
Size" strip-based process. The resulting transistor
shows the best trade-off between on-resistance and gate
charge. When used as high and low side in buck
regulators, it gives the best performance in terms of both
conduction and switching losses. This is extremely
important for motherboards where fast switching and
high efficiency are of paramount importance.
APPLICATIONS
I
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC
CONVERTERS
TYPE
V
DSS
R
DS(on)
I
D
STD35NF3LL
STD35NF3LL-1
30 V
30 V
< 0.0195
< 0.0195
35 A
35 A
3
2
1
1
3
IPAK
TO-251
(Suffix “-1”)
DPAK
TO-252
(Suffix “T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
E
AS (1)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
(1) Starting T
j
= 25
o
C, I
D
= 17.5 A, V
DD
= 24 V
Parameter
Value
30
30
± 16
35
25
140
50
0.33
300
Unit
V
V
V
A
A
A
W
W/°C
mJ
-55 to 175
°C
INTERNAL SCHEMATIC DIAGRAM
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| STD3N30 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STD3NB50-1 | ***** BITTE 4969170 VERWENDEN***** |
| STD3NB50 | N - CHANNEL 500V - 2.5ohm - 3A - IPAK/DPAK PowerMESH MOSFET |
| STD3NC50 | N - CHANNEL 500V - 2.4ohm - 3A TO-251/TO-252 PowerMESHII MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STD35NF3LL | 制造商:STMicroelectronics 功能描述:MOSFET N D-PAK |
| STD35NF3LL_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.014ohm - 35A - DPAK STripFET TM II Power MOSFET |
| STD35NF3LL-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.014 ohm - 35A IPAK/DPAK STripFET⑩ II POWER MOSFET |
| STD35NF3LLT4 | 功能描述:MOSFET N-Ch 30 Volt 35 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD35P6LLF6 | 功能描述:MOSFET P-CH 60V 35A DPAK 制造商:stmicroelectronics 系列:STripFET? F6 包裝:剪切帶（CT） 零件狀態(tài):有效 FET 類型:MOSFET P 通道，金屬氧化物 FET 功能:標準 漏源極電壓（Vdss）:60V 電流 - 連續(xù)漏極（Id）（25°C 時）:35A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:28 毫歐 @ 17.5A，10V 不同 Id 時的 Vgs（th）（最大值）:2.5V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:30nC @ 4.5V 不同 Vds 時的輸入電容（Ciss）:3780pF @ 25V 功率 - 最大值:70W 工作溫度:175°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-252-3，DPak（2 引線+接片），SC-63 供應商器件封裝:DPAK 標準包裝:1 |
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