欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: STD4NK60Z
廠商: 意法半導體
英文描述: N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET
中文描述: N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK齊納保護SuperMESH⑩功率MOSFET
文件頁數: 1/16頁
文件大小: 759K
代理商: STD4NK60Z
1/16
March 2003
STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1
STB4NK60Z-STD4NK60Z-STD4NK60Z-1
N-CHANNEL600V-1.76
-4ATO-220/FP/DPAK/IPAK/D
2
PAK/I
2
PAK
Zener-Protected SuperMESHPower MOSFET
I
TYPICAL R
DS
(on) = 1.76
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
GATE CHARGE MINIMIZED
I
VERY LOW INTRINSIC CAPACITANCES
I
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh products.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
I
LIGHTING
ORDERING INFORMATION
SALES TYPE
TYPE
V
DSS
R
DS(on)
I
D
Pw
STP4NK60Z
STP4NK60ZFP
STB4NK60Z
STB4NK60Z-1
STD4NK60Z
STD4NK60Z-1
600 V
600 V
600 V
600 V
600 V
600 V
< 2
< 2
< 2
< 2
< 2
< 2
4 A
4 A
4 A
4 A
4 A
4 A
70 W
25 W
70 W
70 W
70 W
70 W
MARKING
PACKAGE
PACKAGING
STP4NK60Z
P4NK60Z
TO-220
TUBE
STP4NK60ZFP
P4NK60ZFP
TO-220FP
TUBE
STB4NK60ZT4
B4NK60Z
D
2
PAK
TAPE & REEL
STB4NK60Z-1
B4NK60Z
I
2
PAK
TUBE
STD4NK60ZT4
D4NK60Z
DPAK
TAPE & REEL
STD4NK60Z-1
D4NK60Z
IPAK
TUBE
TO-220
TO-220FP
1
2
3
1
3
DPAK
3
2
1
IPAK
1
3
D
2
PAK
123
I
2
PAK
INTERNAL SCHEMATIC DIAGRAM
相關PDF資料
PDF描述
STB55NF03L-1 N-CHANNEL 30V - 0.01 W - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET
STB55NF03L N-CHANNEL 30V - 0.01 ohm - 55A D2PAK STripFET] POWER MOSFET
STB6000 QPSK DVB/DIRECTVTM direct conversion tuner IC
STB60N03L-10 PC 3C 38#16 PIN RECP
STB60NE03L-10 PC 8C 8#20 SKT RECP
相關代理商/技術參數
參數描述
STD4NK60Z-1 功能描述:MOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD4NK60ZT4 功能描述:MOSFET N-Ch 600 Volt 4 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD4NK80Z 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 800V - 3ヘ - 3A - TO-220/TO-220FP/DPAK/IPAK Zener - Protected SuperMESH⑩ MOSFET
STD4NK80Z-1 功能描述:MOSFET N-Ch, 800V-3ohms Zener SuperMESH 3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD4NK80ZT4 功能描述:MOSFET N-Ch 800 Volt 3.0Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
主站蜘蛛池模板: 青阳县| 钟山县| 泗阳县| 赤峰市| 尼玛县| 石楼县| 西城区| 渭南市| 灌云县| 广河县| 灵石县| 鲜城| 基隆市| 巴南区| 抚州市| 公主岭市| 霍山县| 包头市| 兴宁市| 乌鲁木齐县| 辰溪县| 垦利县| 施秉县| 延庆县| 佛学| 静海县| 安吉县| 灵川县| 泾川县| 佛坪县| 伊宁市| 普洱| 山丹县| 色达县| 平塘县| 平阴县| 石楼县| 灌阳县| 方山县| 独山县| 汾阳市|