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參數(shù)資料
| 型號： | STD5NE10-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-251AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 5A條（丁）|對251AA |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 43K |
| 代理商： | STD5NE10-1 |
STD5NE10
N - CHANNEL 100V - 0.32
- 5A TO-251/TO-252
STripFET
POWER MOSFET
I
TYPICAL R
DS(on)
= 0.32
I
EXCEPTIONAL dv/dtCAPABILITY
I
AVALANCHETESTED
I
100%AVALANCHE TESTED
I
APPLICATIONORIENTED
CHARACTERIZATION
I
ADD SUFFIX”T4” FORORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics
unique
Size
” strip-based process. The resulting transi-
stor shows extremelyhigh packing density forlow
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturingreproducibility.
”Single
Feature
APPLICATIONS
I
MOTOR CONTROL (DISKDRIVES, etc.)
I
DC-DC & DC-AC CONVERTERS
I
SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
May 1999
3
2
1
IPAK
TO-251
(Suffix”-1”)
1
3
DPAK
TO-252
(Suffix”T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
100
V
V
DGR
100
±
20
5
V
V
GS
I
D
I
D
I
DM
(
)
P
tot
V
A
3.5
A
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
20
A
25
W
0.17
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
0.6
V/ns
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
175
o
C
(
1
) I
SD
≤
5A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.4
I
D
STD5NE10
100 V
5 A
1/9
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD5NE10L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 100V - 0.3 ohm - 5A - DPAK/IPAK STripFET POWER MOSFET |
| STD5NE10L1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-251AA |
| STD5NE10LT4 | 功能描述:MOSFET N-Ch 100 Volt 5.0Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD5NE10T4 | 制造商:STMicroelectronics 功能描述: |
| STD5NK40Z | 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 400V 3A DPAK |
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