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參數資料
| 型號： | STE53NC50 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 500V - 0.070ohm - 53A ISOTOP PowerMesh⑩II MOSFET |
| 中文描述： | N溝道500V - 0.070ohm - 53A條1000V的集電極PowerMesh第二MOSFET的⑩ |
| 文件頁數： | 1/8頁 |
| 文件大小： | 275K |
| 代理商： | STE53NC50 |
1/8
May 2002
STE53NC50
N-CHANNEL 500V - 0.070
- 53A ISOTOP
PowerMeshII MOSFET
(1) I
SD
≤
53A, di/dt
≤
100 A/
μ
s, V
DD
≤
24V, Tj
≤
T
jMAX
n
TYPICAL R
DS
(on) = 0.07
n
EXTREMELY HIGH dv/dt CAPABILITY
n
100% AVALANCHE TESTED
n
NEW HIGH VOLTAGE BENCHMARK
n
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
II is
the evolution of the first
generation of MESH OVERLAY
.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
n
SWITH MODE POWER SUPPLIES (SMPS)
n
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
l
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
V
ISO
Insulation Winthstand Voltage (AC-RMS)
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STE53NC50
500V
< 0.08
53 A
Parameter
Value
Unit
500
V
500
V
±30
V
53
A
33
A
212
A
460
W
3.68
3
W/°C
V/ns
2500
V
– 65 to 150
°C
150
°C
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
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