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參數(shù)資料
| 型號： | STGB10NB40LZT4 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH IGBT |
| 中文描述： | N通道鉗位20A條-采用D2PAK IGBT的內(nèi)部鉗位PowerMESH |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 481K |
| 代理商： | STGB10NB40LZT4 |
1/10
August 2003
STGB10NB40LZ
N-CHANNEL CLAMPED 20A - D2PAK
INTERNALLY CLAMPED PowerMESH IGBT
I
POLYSILICON GATE VOLTAGE DRIVEN
I
LOW THRESHOLD VOLTAGE
I
LOW ON-VOLTAGE DROP
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
HIGH VOLTAGE CLAMPING FEATURE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
IGBTs, with outstanding
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.
APPLICATIONS
I
AUTOMOTIVE IGNITION
ORDERING INFORMATION
SALES TYPE
TYPE
V
CES
V
CE(sat)
I
C
STGB10NB40LZ
CLAMPED
< 1.8
V
20 A
MARKING
PACKAGE
PACKAGING
STGB10NB40LZT4
GB10NB40LZ
D
2
PAK
TAPE & REEL
D
2
PAK
1
3
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STGB20NB32LZ-1 | N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH⑩ IGBT |
| STGB3NB60K | N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGD3NB60KT4 | N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGD3NB60K | N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGB7NB60HDT4 | Transient Surge Protection Thyristor; Thyristor Type:Sidac; Leaded Process Compatible:No; Package/Case:DO-214AA; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:25V; Capacitance:110pF RoHS Compliant: No |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGB10NB60S | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT |
| STGB10NB60ST4 | 功能描述:IGBT 晶體管 N Ch 10A 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGB10NC60HD | 制造商:STMicroelectronics 功能描述:Transistor IGBT N-Ch 600V 20A D2PAK |
| STGB10NC60HD_0710 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 10A - TO-220 - D2PAK - TO-220FP very fast PowerMESH IGBT |
| STGB10NC60HD_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:600 V - 10 A - very fast IGBT |
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