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參數(shù)資料
| 型號： | STGB3NB60K |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
| 中文描述： | N溝道3A條- 600V的- IGBT的TO-220/DPAK/D2PAK PowerMESH⑩ |
| 文件頁數(shù)： | 1/14頁 |
| 文件大小： | 707K |
| 代理商： | STGB3NB60K |
1/14
May 2002
STGP3NB60K - STGD3NB60K
STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD
N-CHANNEL 3A - 600V
- TO-220/DPAK/D
2
PAK
PowerMESH IGBT
I
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
I
LOW ON-VOLTAGE DROP (V
cesat
)
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
OFF LOSSES INCLUDE TAIL CURRENT
I
HIGH FREQUENCY OPERATION
I
SHORT CIRCUIT RATED
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH
IGBTs, with outstanding performances.
The suffix “K” identifies a family optimized for high
frequency motor control applications with short cir-
cuit withstand capability.
APPLICATIONS
I
HIGH FREQUENCY MOTOR CONTROLS
I
SMPS AND PFC IN BOTH HARD SWITCHING
AND RESONANT TOPOLOGIES
ORDERING INFORMATION
SALES TYPE
TYPE
V
CES
V
CE(sat)
(Typ) @125°C
I
C
@125°C
STGP3NB60K
STGD3NB60K
STGP3NB60KD
STGP3NB60KDFP
STGB3NB60KD
600 V
600 V
600 V
600 V
600 V
< 2
V
< 2
V
< 2
V
< 2
V
< 2
V
3 A
3 A
3 A
3 A
3 A
MARKING
PACKAGE
PACKAGING
STGP3NB60K
GP3NB60K
TO-220
TUBE
STGD3NB60KT4
GD3NB60K
DPAK
TAPE & REEL
STGP3NB60KD
GP3NB60KD
TO-220
TUBE
STGP3NB60KDFP
GP3NB60KDFP
TO-220FP
TUBE
STGB3NB60KDT4
GB3NB60KD
D
2
PAK
TAPE & REEL
TO-220
1
2
3
1
3
1
2
3
1
3
TO-220FP
DPAK
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
Std. Version
“D” Version
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STGD3NB60KT4 | N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGD3NB60K | N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGB7NB60HDT4 | Transient Surge Protection Thyristor; Thyristor Type:Sidac; Leaded Process Compatible:No; Package/Case:DO-214AA; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:25V; Capacitance:110pF RoHS Compliant: No |
| STGB7NB60HD | N-CHANNEL 7A - 600V DPAK PowerMESH IGBT |
| STGB7NB60KD | N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGB3NB60KD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGB3NB60KDT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 6 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGB3NB60MD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 600V 3A TO-220/D2PAK POWERMESH IGBT |
| STGB3NB60MDT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 3 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGB3NB60SD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT |
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