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參數(shù)資料
| 型號： | STGB7NB60HD |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 7A - 600V DPAK PowerMESH IGBT |
| 中文描述： | N溝道第7A - 600V的IGBT的DPAK封裝PowerMESH |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 322K |
| 代理商： | STGB7NB60HD |
STGB7NB60HD
N-CHANNEL 7A - 600V DPAK
PowerMESH
IGBT
I
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
I
LOW ON-VOLTAGE DROP (V
cesat
)
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
VERY HIGH FREQUENCY OPERATION
I
OFF LOSSES INCLUDE TAIL CURRENT
I
CO-PACKAGED WITH TURBOSWITCH
ANTIPARALLEL DIODE
I
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
perfomances. The suffix "H" identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
with
outstanding
APPLICATIONS
I
HIGH FREQUENCY MOTOR CONTROLS
I
SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
V
GE
I
C
I
C
I
CM
(
)
P
tot
Collector-Emitter Voltage (V
GS
= 0)
Gate-Emitter Voltage
Collector Current (continuous) at T
c
= 25
o
C
Collector Current (continuous) at T
c
= 100
o
C
600
±
20
14
V
V
A
7
A
Collector Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
56
A
80
W
0.64
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
TYPE
V
CES
600 V
V
CE(sat)
< 2.8 V
I
C
7 A
STGB7NB60HD
June 1999
1
3
D
2
PAK
TO-263
(Suffix "T4")
1/8
相關PDF資料 |
PDF描述 |
|---|---|
| STGB7NB60KD | N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGB7NC60HD | N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT |
| STGB7NC60HDT4 | N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT |
| STGF7NC60HD | N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT |
| STGP7NC60HD | N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STGB7NB60HDT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGB7NB60KD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK PowerMESH⑩ IGBT |
| STGB7NB60KDT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGB7NB60KT4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB |
| STGB7NB60MDT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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