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參數資料
| 型號： | STGB7NC60HDT4 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT |
| 中文描述： | N溝道第14A - 600V的- TO-220/TO-220FP/DPAK非常IGBT的快速PowerMESH |
| 文件頁數： | 1/15頁 |
| 文件大小： | 430K |
| 代理商： | STGB7NC60HDT4 |
1/15
June 2005
STGP7NC60HD
STGF7NC60HD - STGB7NC60HD
N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK
Very Fast PowerMESH IGBT
Table 1: General Features
I
LOWER ON-VOLTAGE DROP (V
cesat
)
I
OFF LOSSES INCLUDE TAIL CURRENT
I
LOSSES INCLUDE DIODE RECOVERY
ENERGY
I
LOWER C
RES
/C
IES
RATIO
I
HIGH FREQUENCY OPERATION UP TO 70
KHz
I
VERY SOFT ULTRA FAST RECOVERY ANTI
PARALLEL DIODE
I
NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRIBUTION
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
erMESH
IGBTs, with outstanding performances.
The suffix "H" identifies a family optimized for high
frequency applications in order to achieve very
high switching performances (reduced tfall) man-
taining a low voltage drop.
APPLICATIONS
I
HIGH FREQUENCY INVERTERS
I
SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
I
MOTOR DRIVERS
Table 2: Order Code
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE
V
CES
V
CE(sat)
(Max)
@25°C
I
C
@100°C
STGP7NC60HD
STGF7NC60HD
STGB7NC60HD
600 V
600 V
600 V
< 2.5
V
< 2.5
V
< 2.5
V
14 A
6 A
14 A
TO-220
1
2
3
1
2
3
TO-220FP
1
3
D
2
PAK
PART NUMBER
MARKING
PACKAGE
PACKAGING
STGP7NC60HD
GP7NC60HD
TO-220
TUBE
STGF7NC60HD
GF7NC60HD
TO-220FP
TUBE
STGB7NC60HDT4
GB7NC60HD
D
2
PAK
TAPE & REEL
Rev.9
相關PDF資料 |
PDF描述 |
|---|---|
| STGF7NC60HD | N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT |
| STGP7NC60HD | N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT |
| STGD3NB60SDT4 | N-CHANNEL 3A - 600V DPAK POWERMESH IGBT |
| STGD3NB60SD | N-CHANNEL 3A - 600V DPAK Power MESH IGBT |
| STGD3NB60St4 | 24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STGB7NC60HT4 | 功能描述:IGBT 晶體管 IGBT 600 V Power Bipolar D2PAK Trans RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGB8NC60K | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT |
| STGB8NC60KD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:600 V - 8 A - short circuit rugged IGBT |
| STGB8NC60KDT4 | 功能描述:IGBT 晶體管 N Ch 100V 0.033 Ohm 25A Pwr MOSFET RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGB8NC60KT4 | 功能描述:IGBT 晶體管 N Ch 1000V 2.5A Pwr MOSFET RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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