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參數(shù)資料
| 型號(hào)： | STGD3NB60HD |
| 英文描述： | N-CHANNEL 3A 600V DPAK POWERMESH IGBT |
| 中文描述： | N溝道3A條600V的IGBT的DPAK封裝POWERMESH |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 502K |
| 代理商： | STGD3NB60HD |
1/10
September 2003
STGD3NB60HD
N-CHANNEL 6A - 600V
- DPAK
PowerMESH IGBT
I
HIGH INPUT IMPEDANCE
I
OFF LOSSES INCLUDE TAIL CURRENT
I
LOW GATE CHARGE
I
HIGH FREQUENCY OPERATION
I
TYPICAL SHORT CIRCUIT WITHSTAND TIME
5micro S-family, 4 micro H family
I
CO-PACKAGED WITH TURBOSWITCH
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high
frequency applications (up to 50kHz)in order to
achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.
APPLICATIONS
I
HIGH FREQUENCY MOTOR CONTROLS
I
SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
ORDERING INFORMATION
SALES TYPE
TYPE
V
CES
V
CE(sat) (Max)
@25°C
I
C
@100°C
STGD3NB60HD
600 V
< 2.8
V
6 A
MARKING
PACKAGE
PACKAGING
STGD3NB60HDT4
GD3NB60HD
DPAK
TAPE & REEL
DPAK
1
3
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STGD3NB60HDT4 | N-CHANNEL 3A 600V DPAK POWERMESH IGBT |
| STGD3NB60HT4 | Transient Surge Protection Thyristor; Thyristor Type:Sidac; Leaded Process Compatible:No; Package/Case:DO-214AA; Peak Reflow Compatible (260 C):No; Repetitive Reverse Voltage Max, Vrrm:58V; Capacitance:50pF; Holding Current:150mA RoHS Compliant: No |
| STGD3NB60KD | SIDACTOR - TECCOR P0640SC MC |
| STGD3NB60M | 58V SURGECTOR, DO-214AA |
| STGD3NB60MT4 | Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:58V; Capacitance:100pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGD3NB60HDT4 | 功能描述:IGBT 600V 10A 50W DPAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:PowerMESH™ 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| STGD3NB60HT4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 6A I(C) | TO-252AA |
| STGD3NB60K | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGD3NB60KD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 6A - 600V DPAK SHORT CIRCUIT PROOF POWERMESH IGBT |
| STGD3NB60KT4 | 制造商:STMicroelectronics 功能描述: |
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