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參數資料
| 型號： | STGD3NB60KD |
| 英文描述： | SIDACTOR - TECCOR P0640SC MC |
| 中文描述： | N溝道6A條- 600V的DPAK封裝短路IGBT的證明POWERMESH |
| 文件頁數： | 1/10頁 |
| 文件大小： | 502K |
| 代理商： | STGD3NB60KD |
1/10
September 2003
STGD3NB60HD
N-CHANNEL 6A - 600V
- DPAK
PowerMESH IGBT
I
HIGH INPUT IMPEDANCE
I
OFF LOSSES INCLUDE TAIL CURRENT
I
LOW GATE CHARGE
I
HIGH FREQUENCY OPERATION
I
TYPICAL SHORT CIRCUIT WITHSTAND TIME
5micro S-family, 4 micro H family
I
CO-PACKAGED WITH TURBOSWITCH
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high
frequency applications (up to 50kHz)in order to
achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.
APPLICATIONS
I
HIGH FREQUENCY MOTOR CONTROLS
I
SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
ORDERING INFORMATION
SALES TYPE
TYPE
V
CES
V
CE(sat) (Max)
@25°C
I
C
@100°C
STGD3NB60HD
600 V
< 2.8
V
6 A
MARKING
PACKAGE
PACKAGING
STGD3NB60HDT4
GD3NB60HD
DPAK
TAPE & REEL
DPAK
1
3
INTERNAL SCHEMATIC DIAGRAM
相關PDF資料 |
PDF描述 |
|---|---|
| STGD3NB60M | 58V SURGECTOR, DO-214AA |
| STGD3NB60MT4 | Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:58V; Capacitance:100pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V |
| STGP3NB60M | N-CHANNEL 600V 3A TO-220/DPAK POWERMESH IGBT |
| STGP10N50A | Transient Surge Protection Thyristor; Thyristor Type:Sidac; Package/Case:DO-214AA; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:65V; Capacitance:70pF; Forward Voltage:5V; Holding Current:120mA; Leakage Current:5uA RoHS Compliant: NA |
| STH221 | Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:170V; Capacitance:60pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STGD3NB60KT4 | 制造商:STMicroelectronics 功能描述: |
| STGD3NB60M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 600V 3A TO-220/DPAK POWERMESH IGBT |
| STGD3NB60MT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 3 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD3NB60S | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH⑩ IGBT |
| STGD3NB60SD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - DPAK PowerMESH TM IGBT |
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