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參數資料
| 型號： | STGE50NB60HD |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 50A - 600V ISOTOP PowerMESH IGBT |
| 中文描述： | N溝道50A條- 600V的IGBT的1000V的集電極PowerMESH |
| 文件頁數： | 1/6頁 |
| 文件大小： | 47K |
| 代理商： | STGE50NB60HD |
STGE50NB60HD
N-CHANNEL 50A - 600V ISOTOP
PowerMESH
IGBT
PRELIMINARY DATA
I
HIGH INPUT IMPEDANCE
(VOLTAGEDRIVEN)
I
LOW ON-VOLTAGEDROP (V
CESAT
)
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
VERY HIGH FREQUENCY OPERATION
I
OFFLOSSES INCLUDE TAIL CURRENT
I
CO-PACKAGEDWITH TURBOSWITCH
ANTIPARALLELDIODE
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequencyapplications(<120kHz).
with
outstanding
APPLICATIONS
I
HIGH FREQUENCY MOTOR CONTROLS
I
WELDING EQUIPMENTS
I
SMPSAND PFC IN BOTH HARDSWITCH
AND RESONANTTOPOLOGIES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
V
GE
I
C
I
C
I
CM
(
)
P
tot
Collector-Emitter Voltage (V
GS
= 0)
Gate-Emitter Voltage
Collector Current (continuous) at T
c
= 25
o
C
Collector Current (continuous) at T
c
= 100
o
C
600
±
20
100
V
V
A
50
A
Collector Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
400
A
300
W
2.4
W/
o
C
T
stg
Storage Temperature
-65 to 150
o
C
o
C
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
TYPE
V
CES
V
CE(sat)
I
C
STGE50NB60HD
600 V
< 2.8 V
50 A
June 1999
ISOTOP
1/6
相關PDF資料 |
PDF描述 |
|---|---|
| STGF10NB60SD | N-CHANNEL 10A - 600V TO-220FP PowerMESH? IGBT |
| STGP14NC60KD | Suppressors, Outlet; Suppressor Type:Outlet Strip; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No |
| STGP7NB60FD | N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH? IGBT |
| STGP7NB60HD | N-CHANNEL 7A - 600V TO-220/FP PowerMESH IGBT |
| STGP7NB60KD | N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK PowerMESH⑩ IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STGE50NC60VD | 功能描述:IGBT 晶體管 N-chnl 50A-600V PowerMESH RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGE50NC60WD | 功能描述:IGBT 晶體管 N-Ch 600volt 50 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGF10H60DF | 制造商:STMicroelectronics 功能描述:IGBT 600V 20A 30W TO220FP 制造商:STMicroelectronics 功能描述:SADA_600 V, 10 A high speed trench gate field-stop IGBT |
| STGF10NB60SD | 功能描述:IGBT 晶體管 N-Ch 600 Volt 10 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGF10NB60SD_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 10A - 600V - TO-220FP PowerMESH TM IGBT |
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