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參數資料
| 型號： | STGP7NB60HDFP |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel 7A-600V- TO-220/FP PowerMESH IGBT(N溝道絕緣柵雙極晶體管) |
| 中文描述： | N溝道第7A - 600V的TO-220/FP PowerMESH IGBT的（不適用溝道絕緣柵雙極晶體管） |
| 文件頁數： | 1/9頁 |
| 文件大小： | 108K |
| 代理商： | STGP7NB60HDFP |
STGP7NB60HD
STGP7NB60HDFP
N-CHANNEL 7A - 600V - TO-220/FP
PowerMESH
IGBT
I
HIGH INPUT IMPEDANCE
(VOLTAGEDRIVEN)
I
LOW ON-VOLTAGEDROP (V
cesat
)
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
VERY HIGH FREQUENCY OPERATION
I
OFFLOSSES INCLUDE TAIL CURRENT
I
CO-PACKAGEDWITH TURBOSWITCH
ANTIPARALLELDIODE
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequencyapplications(<120kHz).
with
outstanding
APPLICATIONS
I
HIGH FREQUENCY MOTOR CONTROLS
I
SMPSAND PFC IN BOTH HARDSWITCH
AND RESONANTTOPOLOGIES
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
CES
V
CE(sat)
I
C
7 A
7 A
STGP7NB60HD
STGP7NB60HDFP
600 V
600 V
< 2.8 V
< 2.8 V
October 1998
1
2
3
TO-220
TO-220FP
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STGP7NB60HD
600
±
20
14
7
56
80
0.64
STGP7NB60HDFP
600
±
20
13
6
56
35
0.28
-65 to 150
150
V
CES
V
GE
I
C
I
C
I
CM
(
)
P
tot
Collector-Emitter Voltage (VGS = 0)
Gate-Emitter Voltage
Collector Current (continuous) at Tc = 25
o
C
Collector Current (continuous) at Tc = 100
o
C
Collector Current (pulsed)
Total Dissipation at Tc = 25
o
C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
V
V
A
A
A
W
W/
o
C
o
C
o
C
T
stg
T
j
1/9
相關PDF資料 |
PDF描述 |
|---|---|
| STGW40NC60V | N-CHANNEL 50A - 600V TO-247 Hyper Fast PowerMESH⑩ IGBT |
| STGY40NC60V | Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:220uF; Capacitance Tolerance:+/- 20%; ESR:0.4ohm; Operating Temp. Max:105 C; Operating Temp. Min:-55 C RoHS Compliant: Yes |
| STGY40NC60VD | N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH?? IGBT |
| STH12NA60 | Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin; Termination:Radial Leaded; ESR:30ohm; Lead Pitch:5mm; Operating Temp. Max:70 C RoHS Compliant: Yes |
| STH33N20 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STGP7NB60K | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGP7NB60K_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 7A - TO-220 / DPAK Short circuit rated PowerMESH TM IGBT |
| STGP7NB60KD | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGP7NB60KDFP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH TM IGBT |
| STGP7NB60KFP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT |
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