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參數(shù)資料
| 型號： | STK13003 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 中文描述： | 高壓快速開關(guān)NPN電源晶體管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 217K |
| 代理商： | STK13003 |
STK13003
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
I
STK13003 IS REVERSE PINS OUT Vs
STANDARD SOT-82 PACKAGE
I
MEDIUM VOLTAGE CAPABILITY
I
LOW SPREAD OF DYNAMIC PARAMETERS
I
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
I
VERY HIGH SWITCHING SPEED
APPLICATIONS:
I
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
I
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
September 2001
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
Parameter
Value
700
400
BV
EBO
Unit
V
V
V
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage
(I
C
= 0, I
B
= 0.75 A, t
p
< 10
μ
s, T
j
< 150
o
C)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
1.5
3
0.75
1.5
40
A
A
A
A
W
o
C
o
C
-65 to 150
150
SOT-82
1/7
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