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參數資料
| 型號： | STN3NE06 |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel 60V-0.08Ω-3A - SOT-223 STripFETTM Power MOSFET(Ｎ溝道功率ＭＯＳＦＥＴ) |
| 中文描述： | N溝道60V的-0.08Ω- 3A條-采用SOT - 223 STripFETTM功率MOSFET（不適用溝道功率MOSFET的） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 94K |
| 代理商： | STN3NE06 |
STN3NE06
N - CHANNEL 60V - 0.08
- 3A - SOT-223
STripFET
POWER MOSFET
I
TYPICAL R
DS(on)
= 0.08
I
EXCEPTIONAL dv/dt CAPABILITY
I
AVALANCHERUGGED TECHNOLOGY
I
100 % AVALANCHETESTED
I
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics
unique
Size
” stip-based process. The resultingtransis-
tor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturingreproducibility.
”Single
Feature
APPLICATIONS
I
DC MOTORCONTROL (DISK DRIVES,etc.)
I
DC-DC & DC-AC CONVERTERS
I
SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 0.100
I
D
STN3NE06
60 V
3 A
August 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
60
60
±
20
3
Unit
V
V
V
A
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
1.8
12
2.5
0.02
6
A
A
W
W/
o
C
V/ns
o
C
o
C
dv/dt(
1
)
T
stg
T
j
Storage Temperature
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
New RDS (on) spec. starting from JULY 98
-65 to 150
150
(
1
) I
SD
≤
12 A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
1
2
2
3
SOT-223
1/9
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相關代理商/技術參數 |
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| STN3NE06L | 功能描述:MOSFET ALT 511-STN3NF06L SOT-223 N-CH 60V 3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STN3NF06 | 功能描述:MOSFET N-Ch 30 Volt 3 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STN3NF06L | 功能描述:MOSFET N-Ch 60 Volt 4 AMP RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STN3NF06L_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 60 V, 0.07 ヘ, 4 A, SOT-223 STripFET⑩ II Power MOSFET |
| STN3P6F6 | 功能描述:MOSFET P-Ch 60 V, 0.13 Ohm 3 A STripFET VI RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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