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參數資料
型號: STP1100BGA-100
元件分類: 微控制器/微處理器
英文描述: 32-BIT, 100 MHz, RISC PROCESSOR, PBGA272
封裝: PLASTIC, BGA-272
文件頁數: 1/32頁
文件大小: 168K
代理商: STP1100BGA-100
Preliminary
DATA SHEET
1
STP1100BGA
microSPARC-IIep
SPARC v8 32-Bit Microprocessor With PCI/DRAM Interfaces
DESCRIPTION
The microSPARC-IIep 32-bit microprocessor is a highly integrated, high-performance microprocessor. Imple-
menting the SPARC Architecture version 8 specication, it is ideally suited for low-cost uniprocessor
embedded applications.
It is built with leading edge CMOS technology, with the core operating at a low voltage of 3.3V for optimized
power consumption.
The microSPARC-IIep includes on chip: integer unit (IU), oating-point unit (FPU), large separate instruction
and data caches, a 32-entry version 8 reference MMU, programmable DRAM controller, PCI controller, PCI
bus interface, a 16-entry IOMMU, ash memory interface support, interrupt controller, 2 timers, internal and
boundary scan through JTAG interface, power management and clock generation capabilities.
The operating frequencies are 100 MHz.
Features
Benets
Integrated 32-bit, 33 MHz PCI expansion bus controller
Connection to industry-standard expansion bus
Integrated 256 MByte DRAM controller
High-bandwidth memory controller to reduce latency
Built-in 16 MByte ash memory controller
Flash memory interface runs real-time operating systems
that loads and runs code out of ROM
SPARC high-performance RISC architecture
Compatible with over 10,000 applications and existing
development tools
Support for little and big endian byte ordering
Handles with ease PCI devices designed for DOS
machines, along with UNIX applications
8-window, 136-word register le
Fast interrupt response, procedure calls, and program
execution
16 KByte instruction cache and 8 KByte data cache
Decouples processor operation from slow external memory
Built-in oating-point unit
Supports concurrent execution of oating-point and integer
instructions
On-chip memory management unit
Support for sophisticated operating systems with memory
protection and virtual addressing
Operating voltage of 3.3V with 5V compatible I/O
Low-power core reduces power consumption and supports
industry-standard peripherals
Integrated power management circuitry
Consumes minimal power during standby
IEEE 1149.1 (JTAG) boundary scan test bus
Ease of manufacturing tests
December 1997
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相關代理商/技術參數
參數描述
STP110N10F7 功能描述:MOSFET N-Ch 100V 6mOhm 110A STripFET VII RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP110N55F6 功能描述:MOSFET N-Ch 55V 4.3mOhm 55V STripFET VI RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP110N8F6 功能描述:MOSFET N-CH 80V 110A TO-220 制造商:stmicroelectronics 系列:STripFET? F6 包裝:管件 零件狀態:有效 FET 類型:MOSFET N 通道,金屬氧化物 FET 功能:標準 漏源極電壓(Vdss):80V 電流 - 連續漏極(Id)(25°C 時):110A(Tc) 不同?Id,Vgs 時的?Rds On(最大值):6.5 毫歐 @ 55A,10V 不同 Id 時的 Vgs(th)(最大值):4.5V @ 250μA 不同 Vgs 時的柵極電荷(Qg):150nC @ 10V 不同 Vds 時的輸入電容(Ciss):9130pF @ 40V 功率 - 最大值:200W 工作溫度:-55°C ~ 175°C(TJ) 安裝類型:通孔 封裝/外殼:TO-220-3 供應商器件封裝:TO-220 標準包裝:50
STP110N8F7 功能描述:MOSFET N-CH 80V 80A TO-220 制造商:stmicroelectronics 系列:STripFET?? 包裝:管件 零件狀態:有效 FET 類型:MOSFET N 通道,金屬氧化物 FET 功能:標準 漏源極電壓(Vdss):80V 電流 - 連續漏極(Id)(25°C 時):80A(Tc) 不同?Id,Vgs 時的?Rds On(最大值):7.5 毫歐 @ 40A,10V 不同 Id 時的 Vgs(th)(最大值):4.5V @ 250μA 不同 Vgs 時的柵極電荷(Qg):46.8nC @ 10V 不同 Vds 時的輸入電容(Ciss):3435pF @ 40V 功率 - 最大值:170W 工作溫度:-55°C ~ 175°C(TJ) 安裝類型:通孔 封裝/外殼:TO-220-3 供應商器件封裝:TO-220 標準包裝:50
STP1141 制造商:未知廠家 制造商全稱:未知廠家 功能描述:STP1141/1151 系列超低壓差,帶開關端集成穩壓器
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