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參數資料
| 型號： | STP2HNC60FP |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 600V - 4ohm - 2.2A TO-220/TO-220FP PowerMesh⑩II MOSFET |
| 中文描述： | N溝道600V的- 4Ω - 2.2a在TO-220/TO-220FP PowerMesh第二MOSFET的⑩ |
| 文件頁數： | 1/9頁 |
| 文件大小： | 328K |
| 代理商： | STP2HNC60FP |
1/9
May 2001
STP2HNC60
STP2HNC60FP
N-CHANNEL 600V - 4
- 2.2A TO-220/TO-220FP
PowerMeshII MOSFET
I
TYPICAL R
DS
(on) = 4
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
NEW HIGH VOLTAGE BENCHMARK
I
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
II is
the evolution of the first
generation of MESH OVERLAY
.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol
()Pulse width limited by safe operating area
.
TYPE
V
DSS
R
DS(on)
I
D
STP2HNC60
STP2HNC60FP
600 V
600 V
< 5
< 5
2.2 A
2.2 A
Parameter
Value
Unit
STP2HNC60
STP2HNC60FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
G
)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
600
V
600
V
Gate- source Voltage
± 30
V
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
2.2
2.2(*)
A
1.4
1.4(*)
A
Drain Current (pulsed)
8.8
8.8(*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
60
30
W
0.48
0.24
W/°C
V/ns
dv/dt
V
ISO
T
stg
T
j
3.5
Insulation Withstand Voltage (DC)
--
2000
V
Storage Temperature
–65 to 150
°C
Max. Operating Junction Temperature
150
°C
(1)I
SD
≤
2.2A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(*)
.
Limited only by maximum temperature allowed
TO-220
1
2
3
1
2
3
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
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